RB421DFH
Schottky Barrier Diode
(AEC-Q101 qualified) Data sheet
●Ou...
RB421DFH
Schottky Barrier Diode
(AEC-Q101 qualified) Data sheet
●Outline
VR
40
V
Io
100
mA
IFSM
1
A
●Features High reliability Small mold type Super Low VF
●Inner Circuit
●Application
●Packaging Specifications
Small current rectification
Packing
Embossed Tape
Reel Size(mm)
180
●Structure
Taping Width(mm)
8
Basic Ordering Unit(pcs)
3000
Epitaxial planar
Taping Code
T146
Marking
D3C
●Absolute Maximum Ratings (Ta = 25ºC unless otherwise stated)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage Reverse voltage
VRM
Duty≦0.5
VR
Reverse direct voltage
40
V
40
V
Average rectified forward current
Io
Glass epoxy mounted、60Hz half sin waveform、resistive load
100
mA
Peak forward surge current
Junction temperature Storage temperature
IFSM
60Hz half sin waveform、 Non-repetitive、one cycle、Ta=25℃
Tj
-
Tstg
-
1
A
125
℃
-40 ~ 125
℃
●Characteristics (Ta = 25ºC unless otherwise stated)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
VF1
IF=100mA
- - 0.55 V
VF2
IF=10mA
- - 0.34 V
Reverse current
IR
VR=10V
- - 30 μA
Capacitance between terminals
Ct
VR=10V f=1MHz
- 6 - pF
※Caution:static electricity
Attention
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1/4
2018/06/07_Rev.002
RB421DFH
●Characteristic Curves
Data sheet
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