RB450UMFH

Schottky Barrier Diode RB450UMFH Application Small current rectification Dimensions (Unit : mm) 2.0±0.1 0.32 +0.1 -0.05 Each leads has same dimensions 0.9±0.1 Datasheet AEC-Q101 Qualified Land Size Figure (Unit : mm) 1.3 0.53±0.1 0.425 Features 1) Ultra small mold type (UMD3F) 2) High reliability 3) Low VF 2.1±0.1 1.25±0.1 (3) 3F 0~0.1 (1) (2) 0.53±0.1 0.425 0.65 0.65 1.3±0.1 ROHM : UMD3F JEDEC : SOT-323FL JEITA : SC-85 : Year, week and factory 0.13±0.05 0.9MIN 1.6 0.65 UMD3F 0.8MIN Structure (3) (1) Anode (2) NC (3) Cathode (1) (2) Construction Silicon epitaxial planar type Taping Dimensions (Unit : mm) TL Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 45 V Reverse voltage VR Direct reverse voltage 40 V Average forward rectified current IO Glass epoxy board mounted, 60Hz half sin wave, resistive load 100 mA Non-repetitive forward surge current IFSM 60Hz half sin wave, non-repetitive at Ta=25ºC, 1cycle 1 A Operating Junction Temperature Tj - 150 °C Storage temperature Tstg - 55 to 150 °C Electrical Characteristics (Tj= 25°C) Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage VF1 VF2 Reverse current IR1 IR2 Capacitance between terminals Ct IF=10mA IF=100mA VR=10V VR=40V f=1MHz, VR=10V - - 0.39 V - - 0.55 V - - 1 A - - 10 A - 6.0 - pF www.rohm.com © 2015 ROHM Co., Ltd. All rights reserv...