BAS40HMFH

Schottky Barrier Diode BAS40HMFH Application Small current rectification Dimensions (Unit : mm) Datasheet AEC-Q101 Qualified Land Size Figure (Unit : mm) 1.9 2.4 Features 1) Small mold type 4A SOT-23 1.0MIN 0.8MIN (SOT-23) r 2) High reliability o 3) Low VF d f Construction e Silicon epitaxial planar type ROHM : SSD3 JEDEC : SOT-23 JEITA : - Taping Dimensions (Unit : mm) Structure (3) (1) Anode (2) NC (3) Cathode (1) (2) mendigns T116 m es Absolute Maximum Ratings (Ta= 25°C) o Parameter Symbol c D Repetitive peak reverse voltage VRM e Reverse voltage VR w Average forward rectified current IF R e Repetitive peak forward current IFRM t N Non-repetitive forward surge current IFSM o Operating junction temperature Tj N Storage temperature Tstg Conditions Duty≦0.5 Direct reverse voltage Direct current t ≦1s, Duty≦0.5 Square wave, tp<10ms, non-repetitive at Ta=25ºC - - Limits Unit 40 V 40 V 120 mA 120 mA 0.6 A 150 °C 55 to 150 °C Electrical Characteristics (Tj= 25°C) Parameter Symbol VF1 Forward voltage VF2 VF3 Reverse current IR1 IR2 Conditions IF=1mA IF=10mA IF=40mA VR=30V VR=40V Min. Typ. Max. Unit - - 0.38 V - - 0.50 V - - 1V - - 1 A - - 10 A www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/3 2016.11 - Rev.B BAS40HMFH Electrical Characteristic Curves Data Sheet FORWARD CURRENT : IF (mA) 500 10000 REVERSE CURRENT : IR (A) Tj = 150°C 100 1000 Tj = 150°C 10 Tj = 125°C 100 ...