RBR2MM60CTF
Schottky Barrier Diode
(AEC-Q101 qualified) Data sheet
...
RBR2MM60CTF
Schottky Barrier Diode
(AEC-Q101 qualified) Data sheet
●Outline
VR
60
V
Io
2
A
IFSM
30
A
●Features High reliability Small power mold type Low VF
●Inner Circuit
●Application
●Packaging Specifications
General rectification
Packing
Embossed Tape
Reel Size(mm)
180
●Structure
Taping Width(mm)
8
Quantity(pcs)
3000
Silicon epitaxial planar
Taping Code
TR
Marking
E6
●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage Reverse voltage
Average rectified forward current
VRM
Duty≦0.5
60
V
VR
Reverse direct voltage
60
V
Glass epoxy mounted、
Io
60Hz half sin waveform、resistive load、
2
A
Tc=90℃ Max.
Peak forward surge current
IFSM
60Hz half sin waveform、Non-repetitive、 one cycle、Ta=25℃
30
A
Junction temperature(1)
Tj
-
Storage temperature
Tstg
-
Note(1) To avoid occurrence of thermal runaway, actual board is to be designed to fulfill dPd/dTj<1/Rth(j-a).
150
℃
-55 ~ 150
℃
●Characteristics (Tj=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage Reverse current
VF
IF=2A
- - 0.55 V
IR
VR=60V
- - 120 μA
Attention
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1/5
2019/05/28_Rev.002
RBR2MM60CTF
●Characte...