RB168MM150TF
Schottky Barrier Diode
(AEC-Q101 qualified) Data sheet
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RB168MM150TF
Schottky Barrier Diode
(AEC-Q101 qualified) Data sheet
●Outline
VR
150
V
Io
1
A
IFSM
35
A
●Features High reliability Small power mold type Super low IR
●Inner Circuit
●Application
●Packaging Specifications
General rectification
Packing
Embossed Tape
Reel Size(mm)
180
●Structure
Taping Width(mm)
8
Quantity(pcs)
3000
Silicon epitaxial planar
Taping Code
TR
Marking
35
●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage Reverse voltage
Average rectified forward current
VRM
Duty≦0.5
150
V
VR
Reverse direct voltage
150
V
Glass epoxy mounted、
Io
60Hz half sin waveform、resistive load、
1
A
Tc=110℃ Max.
Peak forward surge current
IFSM
60Hz half sin waveform、Non-repetitive、 one cycle、Ta=25℃
35
A
Junction temperature Storage temperature
Tj
-
Tstg
-
150
℃
-55 ～ 150
℃
●Characteristics (Tj=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Forward voltage
VF
IF=1A
Reverse current
IR
VR=150V
Min. Typ. Max. Unit - 0.76 0.84 V - 0.11 4 μA
Attention
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1/5
2019/05/28_Rev.002
RB168MM150TF
●Characteristic Curves
Data sheet
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