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IXFQ34N50P3

IXYS

Power MOSFET

Polar3TM HiperFETTM Power MOSFET IXFQ34N50P3 IXFH34N50P3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rec...



IXFQ34N50P3

IXYS


Octopart Stock #: O-1443200

Findchips Stock #: 1443200-F

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Description
Polar3TM HiperFETTM Power MOSFET IXFQ34N50P3 IXFH34N50P3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = ID25 = RDS(on)  500V 34A 180m TO-3P (IXFQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque TO-3P TO-247 Maximum Ratings 500 V 500 V  30 V  40 V 34 A 85 A 17 A 400 mJ 35 V/ns 695 W -55 ... +150 150 -55 ... +150  C  C  C 300 °C 260 °C 1.13 / 10 5.5 6.0 Nm/lb.in. g g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 500 V 3.0 5.0 V           100 nA 50 A 1.5 mA 180 m G D S Tab TO-247 ( IXFH) G D S Tab G = Gate D = Drain S = Source Tab = Drain Features  Fast Intrinsic Rectifier  Avalanche Rated  Low RDS(ON) and QG  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  Laser Drivers  AC and DC Motor Drives  Robotics and Servo...




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