Power MOSFET
Polar3TM HiperFETTM Power MOSFET
IXFQ34N50P3 IXFH34N50P3
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rec...
Description
Polar3TM HiperFETTM Power MOSFET
IXFQ34N50P3 IXFH34N50P3
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
VDSS = ID25 =
RDS(on)
500V 34A 180m
TO-3P (IXFQ)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg TL TSOLD
Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque TO-3P TO-247
Maximum Ratings
500
V
500
V
30
V
40
V
34
A
85
A
17
A
400
mJ
35
V/ns
695
W
-55 ... +150 150
-55 ... +150
C C C
300
°C
260
°C
1.13 / 10
5.5 6.0
Nm/lb.in.
g g
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values Min. Typ. Max.
500
V
3.0
5.0 V
100 nA
50 A 1.5 mA
180 m
G D S Tab
TO-247 ( IXFH)
G
D S
Tab
G = Gate
D = Drain
S = Source Tab = Drain
Features
Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance
Advantages
High Power Density Easy to Mount Space Savings
Applications
Switch-Mode and Resonant-Mode Power Supplies
DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo...
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