IXFN44N80Q3

Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated IXFN44N80Q3 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Mounting Torque for Base Plate Terminal Connection Torque Maximum Ratings 800 V 800 V 30 V 40 V 37 A 130 A 44 A 3.5 J 50 780 -55 ... +150 150 -55 ... +150 V/ns W C C C 2500 3000 1.5/13 1.3/11.5 30 V~ V~ Nm/lb.in. Nm/lb.in. g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 22A, Note 1 Characteristic Values Min. Typ. Max. 800 V 3.5 6.5 V 200 nA 50 A 2.5 mA 190 m VDSS = ID25 =  RDS(on) trr  800V 37A 190m 300ns miniBLOC E153432 S G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features  International Standard Package  Low Intrinsic Gate Resistance  miniBLOC with Aluminum Nitride Isolation  Avalanche Rated  Low Package Inductance  Fast Intrinsic Rectifier  Low RDS(on) and QG Advantages  High Power Density  Eas...