2N5485

2N5485 Silicon N−Channel JFET Transistor VHF/UHF Amplifier TO92 Type Package Absolute Maximum Ratings: Drain−Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Reverse Gate−Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions OFF Characteristics Gate−Source Breakdown Voltage Gate Reverse Current Gate−Source Cutoff Voltage ON Characteristics V(BR)GSS IG = −1A, VDS = 0 IGSS VGS = −20V, VDS = 0 VGS = −20V, VDS = 0, TA = +100C VGS(off) ID = 10nA, VDS = 15V Zero−Gate−Voltage Drain Current IDSS VDS = 15V, VGS = 0 Small Signal Characteristics Characteristi...