N-Channel Transistor. PN4393 Datasheet

PN4393 Transistor. Datasheet pdf. Equivalent


Part PN4393
Description N-Channel Transistor
Feature PN4393 Silicon N−Channel JFET Transistor Chopper, High Speed Switch TO92 Type Package Applications:.
Manufacture NTE
Datasheet
Download PN4393 Datasheet


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PN4393
PN4393
Silicon NChannel JFET Transistor
Chopper, High Speed Switch
TO92 Type Package
Applications:
D Low Level Analog Switches
D Chopper Stabilized Amplifiers
D Sample and Hold Circuits
Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified)
DrainGate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Forward Gate Current, IGF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125C/W
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 357C/W
Note 1. These ratings are limiting values above which the serviceability of any semiconductor device
may be impaired and are based on a maximum junction temperature of +150C.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
GateSource Breakdown Voltage
Gate Reverse Current
GateSource Cutoff Voltage
GateSource Forward Voltage
Drain Cutoff Leakage Current
ON Characteristics
V(BR)GSS IG = 1A, VDS = 0
IGSS VGS = 15V, VDS = 0
VGS = 15V, VDS = 0, TA = +150C
VGS(off) VDS = 20V, ID = 1nA
VGS(f) VDS = 0, IG = 1mA
ID(off) VDS = 20V, VGS = 5V
VDS = 20V, VGS = 5V, TA = +150C
ZeroGate Voltage Drain Current
DrainSource ON Voltage
IDSS VDS = 20V, VGS = 0, Note 2
VDS(on) ID = 3mA, VGS = 0
DrainSource ON Resistance
rDS(on) ID = 1mA, VGS = 0
Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 1%.
Min Typ Max Unit
30
V
− −1.0 nA
− −0.2 A
0.5 − −3.0 V
1.0 V
0.1 nA
0.2 A
5
30 mA
0.4 V
100



PN4393
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
SmallSignal Characteristics
DrainSource ON Resistance
rds(on) VDS = VGS = 0, f = 1kHz
100
Input Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Ciss VDS = 20V, VGS = 0, f = 1MHz
Crss VGS = 5V, f = 1MHz
14 pF
3.5 pF
Rise Time
Fall Time
TurnOn Time
TurnOff Time
tr
ID(on) = 3mA
tf
VGS(off) = 3V
ton
ID(on) = 3mA
toff
VGS(off) = 3V
5 ns
30 ns
15 ns
50 ns
.210
(5.33)
Max
.135 (3.45) Min
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
DSG
.050 (1.27)
.105 (2.67) Max
.205 (5.2) Max
.165
(4.2)
Max
.105 (2.67) Max







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