MJ4502
High-Power PNP Silicon Transistor
This transistor is for use as an output device in complementary audio amplifier...
MJ4502
High-Power
PNP Silicon
Transistor
This
transistor is for use as an output device in complementary audio amplifiers to 100−Watts music power per channel.
Features
High DC Current Gain − hFE = 25−100 @ IC = 7.5 A Excellent Safe Operating Area Complement to the
NPN MJ802 Pb−Free Package is Available*
MAXIMUM RATINGS Rating
Collector−Emitter Voltage Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25_C
Derate above 25_C
Symbol VCER VCB VCEO VEB IC IB PD
Value 100 100 90 4.0 30 7.5 200 1.14
Unit Vdc Vdc Vdc Vdc Adc Adc W W/_C
Operating and Storage Junction Temperature Range
TJ, Tstg −65 to +200 _C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
qJC
0.875
_C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
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30 AMPERE POWER
TRANSISTOR
PNP SILICON 100 VOLTS − 200 WATTS
TO−204AA (TO−3) CASE 1−07 STYLE 1
MARKING DIAGRAM
MJ4502G AYYWW
MEX
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
MJ4502 = Device Code
G
= Pb−Free Package
A
= Assembly Location
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