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MPSA64 Dataheets PDF



Part Number MPSA64
Manufacturers NTE
Logo NTE
Description Silicon PNP Transistor
Datasheet MPSA64 DatasheetMPSA64 Datasheet (PDF)

MPSA64 Silicon PNP Transistor Darlington Amplifier Absolute Maximum Ratings: Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −30V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −30V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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MPSA64 Silicon PNP Transistor Darlington Amplifier Absolute Maximum Ratings: Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −30V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −30V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −10V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −1.2A Total Device Dissipation (TA = 25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions OFF Characteristics Collector−Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 1) V(BR)CES ICBO IEBO IC = −100A, IB = 0 VCB = −30V, IE = 0 VEB = −10V, IC = 0 DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Small Signal Characteristics hFE VCE(sat) VBE(sat) VCE = −5.0V, IC = −10mA VCE = −5.0V, IC = −100mA IC = −100mA, IB = −0.1mA IC = −100mA, VCE = −5.0V Current Gain Bandwidth Product ft IC = -10mA, VCE = -5.0V, f = 100MHz Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  2%. Min Typ Max Unit −30 − − V − − −100 nA − − −100 nA 10,000 − − 20,000 − − − − −1.5 V − − −2.0 V 125 − − MHz .210 (5.33) Max .135 (3.45) Min Seating Plane .500 (12.7) Min .021 (.445) Dia Max .100 (2.54) EBC .050 (1.27) .105 (2.67) Max .205 (5.2) Max .165 (4.2) Max .105 (2.67) Max .


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