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2N4124 Dataheets PDF



Part Number 2N4124
Manufacturers NTE
Logo NTE
Description Silicon NPN Transistor
Datasheet 2N4124 Datasheet2N4124 Datasheet (PDF)

2N4123 & 2N4124 Silicon NPN Transistor General Purpose TO92 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO 2N4123 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V 2N4124 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Collector−Base Voltage, VCBO 2N4123 . . . . . . . . . . . . . . . . . .

  2N4124   2N4124


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2N4123 & 2N4124 Silicon NPN Transistor General Purpose TO92 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO 2N4123 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V 2N4124 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Collector−Base Voltage, VCBO 2N4123 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 2N4124 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Total Device Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/5C Total Device Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/5C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Thermal Resistance, Junction to Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.35C/W Thermal Resistance, Junction to Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2005C/W Electrical Characteristics: (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions OFF Characteristics Collector−Emitter Breakdown Voltage V(BR)CEO 2N4123 IC = 1mA, IE = 0, Note 1 2N4124 Collector−Base Breakdown Voltage 2N4123 V(BR)CBO IC = 105 A, IE = 0 2N4124 Emitter−Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON Characteristics (Note 1) V(BR)EBO ICBO IBL IE = 105 A, IC = 0 VCB = 30V, IE = 0 VBE = 3V, IC = 0 DC Current Gain 2N4123 hFE VCE = 1V, IC = 2mA 2N4124 2N4123 2N4124 VCE = 1V, IC = 50mA Min Typ Max Unit 30 − − V 25 − − V 40 − − V 30 − − V 5−− V − − 50 nA − − 50 nA 50 − 150 120 − 360 25 − − 60 − − Note 1. Pulse Test: Pulse Width = 3005 s, Duty Cycle = 2%. Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max ON Characteristics (Cont’d) (Note 1) Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Small−Signal Characteristics VCE(sat) IC = 50mA, IB = 5mA VBE(sat) IC = 50mA, IB = 5mA − − 0.3 − − 0.95 Current Gain−Bandwidth Product 2N4123 2N4124 fT IC = 10mA, VCE = 20V, f = 100MHz 250 − − 300 − − Output Capacitance Input Capacitance Collector−Base Capacitance Small−Signal Current Gain 2N4123 2N4124 Cobo Cibo Ccb hfe VCB = 5V, IE = 0, f = 100MHz VBE = 0.5V, IC = 0, f = 100kHz IE = 0, VCB = 5V, f = 100kHz IC = 2mA, VCE = 10V, f = 1kHz − − 4.0 − − 8.0 − − 4.0 − 50 200 120 − 480 Current Gain − High Frequency 2N4123 2N4124 |hfe| IC = 10mA, VCE = 20V, f = 100Hz 2.5 − − 3.0 − − 2N4123 2N4124 IC = 2mA, VCE = 10V, f = 1kHz 50 − 200 120 − 480 Noise Figure 2N4123 NF IC = 1005 A, VCE = 5V, RS = 1k3 , Noise Bandwidth = 10Hz to 15.7kHz − − 6.0 2N4124 − − 5.0 Unit V V MHz MHz pF pF pF − − − − db db Note 1. Pulse Test: Pulse Width 3 3005 s, Duty Cycle 3 2%. .210 (5.33) Max .135 (3.45) Min Seating Plane .500 (12.7) Min .021 (.445) Dia Max .100 (2.54) EBC .050 (1.27) .105 (2.67) Max .205 (5.2) Max .165 (4.2) Max .105 (2.67) Max .


2N4123 2N4124 2N3792


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