Document
2N4123 & 2N4124 Silicon NPN Transistor
General Purpose TO92 Type Package
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO 2N4123 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V 2N4124 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Collector−Base Voltage, VCBO 2N4123 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 2N4124 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Total Device Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/5C Total Device Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/5C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Thermal Resistance, Junction to Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.35C/W Thermal Resistance, Junction to Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2005C/W
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector−Emitter Breakdown Voltage V(BR)CEO
2N4123
IC = 1mA, IE = 0, Note 1
2N4124
Collector−Base Breakdown Voltage 2N4123
V(BR)CBO IC = 105 A, IE = 0
2N4124
Emitter−Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON Characteristics (Note 1)
V(BR)EBO ICBO IBL
IE = 105 A, IC = 0 VCB = 30V, IE = 0 VBE = 3V, IC = 0
DC Current Gain 2N4123
hFE VCE = 1V, IC = 2mA
2N4124
2N4123 2N4124
VCE = 1V, IC = 50mA
Min Typ Max Unit
30 − −
V
25 − −
V
40 − −
V
30 − −
V
5−−
V
− − 50 nA
− − 50 nA
50 − 150 120 − 360 25 − − 60 − −
Note 1. Pulse Test: Pulse Width = 3005 s, Duty Cycle = 2%.
Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
ON Characteristics (Cont’d) (Note 1)
Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Small−Signal Characteristics
VCE(sat) IC = 50mA, IB = 5mA VBE(sat) IC = 50mA, IB = 5mA
− − 0.3 − − 0.95
Current Gain−Bandwidth Product 2N4123
2N4124
fT IC = 10mA, VCE = 20V, f = 100MHz 250 − − 300 − −
Output Capacitance Input Capacitance Collector−Base Capacitance Small−Signal Current Gain
2N4123
2N4124
Cobo Cibo Ccb hfe
VCB = 5V, IE = 0, f = 100MHz VBE = 0.5V, IC = 0, f = 100kHz IE = 0, VCB = 5V, f = 100kHz
IC = 2mA, VCE = 10V, f = 1kHz
− − 4.0
− − 8.0
− − 4.0
−
50
200
120 − 480
Current Gain − High Frequency 2N4123
2N4124
|hfe| IC = 10mA, VCE = 20V, f = 100Hz
2.5 − − 3.0 − −
2N4123 2N4124
IC = 2mA, VCE = 10V, f = 1kHz
50 − 200 120 − 480
Noise Figure 2N4123
NF IC = 1005 A, VCE = 5V, RS = 1k3 , Noise Bandwidth = 10Hz to 15.7kHz − − 6.0
2N4124
− − 5.0
Unit
V V
MHz MHz pF pF pF
− − − − db db
Note 1. Pulse Test: Pulse Width 3 3005 s, Duty Cycle 3 2%.
.210 (5.33) Max
.135 (3.45) Min Seating Plane
.500 (12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
EBC
.050 (1.27)
.105 (2.67) Max .205 (5.2) Max
.165 (4.2) Max
.105 (2.67) Max
.