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TIP35C Dataheets PDF



Part Number TIP35C
Manufacturers NTE
Logo NTE
Description Silicon NPN Transistor
Datasheet TIP35C DatasheetTIP35C Datasheet (PDF)

TIP35A, TIP35B, TIP35C Silicon NPN Transistors Power Amp, Switch TO−247 Type Package Features: D 25A Collector Current D Low Leakage Current: ICEO = 1mA @ 30V and 60V D Excellent DC Gain: hFE = 40 (Typ) @ IC = 15A D High Current Gain Bandwidth Product: |hfe| = 3 (Min) @ IC = 1A, f = 1MHz Absolute Maximum Ratings: Collector−Base Voltage, VCB TIP35A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V TIP35B .

  TIP35C   TIP35C


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TIP35A, TIP35B, TIP35C Silicon NPN Transistors Power Amp, Switch TO−247 Type Package Features: D 25A Collector Current D Low Leakage Current: ICEO = 1mA @ 30V and 60V D Excellent DC Gain: hFE = 40 (Typ) @ IC = 15A D High Current Gain Bandwidth Product: |hfe| = 3 (Min) @ IC = 1A, f = 1MHz Absolute Maximum Ratings: Collector−Base Voltage, VCB TIP35A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V TIP35B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V TIP35C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Emitter Voltage, VCEO TIP35A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V TIP35B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V TIP35C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Unclamped Inductive Load, ESB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90mJ Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35.7C/W Note 1. Pulse Test: Pulse Width = 10ms, Duty Cycle  10%. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions OFF Characteristics Collector−Emitter Sustaining Voltage TIP35A TIP35B VCEO(sus) IC = 30mA, IB = 0, Note 2 TIP35C Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle  2%. Min Typ Max Unit 60 − − V 80 − − V 100 − − V Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current TIP35A TIP35B, TIP35C Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 2) ICEO ICES IEBO VCE = 30V, IB = 0 VCE = 60V, IB = 0 VCE = Rated VCEO, VEB = 0 VBE = 5V, IC = 0 − − 1.0 mA − − 1.0 mA − − 0.7 mA − − 1.0 mA DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter ON Voltage Dynamic Characteristics hFE VCE(sat) VBE(on) VCE = 4V, IC = 1.5A VCE = 4V, IC = 15A IC = 15A, IB = 1.5A IC = 25A, IB = 5A VCE = 4V, IC = 15A VCE = 4V, IC = 25A 25 − − 15 − 75 − − 1.8 V − − 4.0 V − − 2.0 V − − 4.0 V Small−Signal Current Gain Current−Gain Bandwidth Product hfe VCE = 10V, IC = 1.0A, f = 1kHz fT VCE = 10V, IC = 1.0A, f = 1MHz 25 − 3 − − − MHz Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle  2%. .217 (5.5) .626 (15.9) Max .197 (5.0) .143 (3.65) Dia Max B C E .787 (20.0) .157 (4.0) .559 (14.2) Min .215 (5.45) .047 (1.2) .094 (2.4) .


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