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BDX54B
SILICON PNP DARLINGTON POWER TRANSISTOR
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DESCRIPTION: The CENTRAL SEMICONDUCTOR BDX54B is a silicon PNP Darlington power transistor designed for high gain amplifier applications.
TO-220 CASE
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance
SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JA JC
80 80 5.0 8.0 12 200 60 -65 to +150 70 2.08
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=80V
ICEO
VCE=40V
IEBO
VEB=5.0V
BVCEO
IC=100mA
80
VCE(SAT) IC=3.0A, IB=12mA
VBE(SAT) IC=3.0A, IB=12mA
VF
IF=10A
hFE
VCE=3.0V, IC=3.0A
750
MAX 200 500 2.0
2.0 2.5 2.8
UNITS V V V A A mA W °C
°C/W °C/W
UNITS μA μA mA V V V V
R0 (19-June 2018)
BDX54B SILICON PNP DARLINGTON POWER TRANSISTOR
TO-220 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) Base 2) Collector 3) Emitter Tab is common to pin 2 MARKING: FULL PART NUMBER
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R0 (19-June 2018)
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