2N5400

2N5400 2N5401 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5400 and 2N5401 are silicon PNP transistors designed for high voltage amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance JA Thermal Resistance JC 2N5400 130 2N5401 160 120 150 5.0 600 625 1.5 -65 to +150 200 83.3 UNITS V V V mA mW W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5400 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=100V - 100 ICBO VCB=100V, TA=100°C - 100 ICBO VCB=120V - - ICBO VCB=120V, TA=100°C - - IEBO VEB=3.0V - 50 BVCBO IC=100μA 130 - BVCEO IC=1.0mA 120 - BVEBO IE=10μA 5.0 - VCE(SAT) IC=10mA, IB=1.0mA - 0.2 VCE(SAT) IC=50mA, IB=5.0mA - 0.5 VBE(SAT) IC=10mA, IB=1.0mA - 1.0 VBE(SAT) IC=50mA, IB=5.0mA - 1.0 hFE VCE=5.0V, IC=1.0mA 30 - hFE VCE=5.0V, IC=10mA 40 240 hFE VCE=5.0V, IC=50mA 40 - fT VCE=10V, IC=10mA, f=100MHz 100 400 Cob VCB=10V, IE=0, f=1.0MHz - 6.0 hfe VCE=10V, IC=1.0mA, f=1.0kHz 30 200 NF VCE=5.0V, IC=250μA, RS=1.0kΩ, f=10Hz to 15.7kHz - 8.0 2N5401 MIN MAX - - - - - 50 - 50 - 50 160 - 150 ...