BD676 BD682 BD678 BD684 BD680
SILICON PNP DARLINGTON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION...
BD676 BD682 BD678 BD684 BD680
SILICON
PNP DARLINGTON POWER
TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BD676 series are silicon
PNP Darlington power
transistors designed for audio and video output applications.
MARKING: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL BD676
Collector-Base Voltage
VCBO 45
Collector-Emitter Voltage
VCEO 45
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current
ICM
Continuous Base Current
IB
Power Dissipation
PD
Operating and Storage Junction Temperature TJ, Tstg
Thermal Resistance
ΘJC
Thermal Resistance
ΘJA
BD678 BD680 BD682
60
80 100
60
80 100
5.0
4.0
6.0
100
40
-65 to +150
3.12
100
BD684 120 120
UNITS V V V A A mA W °C
°C/W °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
ICBO
VCB=Rated VCBO
ICBO
VCB=0.6Rated VCBO, TC=150°C
ICEO
VCE=½Rated VCEO
IEBO
VEB=5.0V
BVCEO
IC=50mA (BD676)
45
BVCEO
IC=50mA (BD678)
60
BVCEO
IC=50mA (BD680)
80
BVCEO
IC=50mA (BD682)
100
BVCEO
IC=50mA (BD684)
120
VCE(SAT) IC=1.5A, IB=6.0mA (BD676: IC=2.0A)
VBE(ON)
VCE=3.0V, IC=1.5A (BD676: IC=2.0A)
hFE
VCE=3.0V, IC=1.5A (BD676: IC=2.0A) 750
hfe
VCE=3.0V, IC=1.5A,
f=1.0MHz (BD676: IC=2.0A)
10
fhfe
VCE=3.0V, IC=1.5A (BD676: IC=2.0A)
60
I(SB)
VCE=50V, tp=20ms
0.8
I(SB)
VCE=40V, tp=20ms (BD676)
1.0
ton
VCC=30V, ICon=1.5A
0.3
toff
IBon=IBof...
