MJE802T

MJE700T THRU MJE703T PNP MJE800T THRU MJE803T NPN COMPLEMENTARY POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE700T, MJE800T series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications as complementary output devices. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg ΘJC MJE700T MJE701T MJE800T MJE801T 60 MJE702T MJE703T MJE802T MJE803T 80 60 80 5.0 4.0 100 50 -65 to +150 2.5 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICBO VCB=Rated VCBO, TC=100°C ICEO VCE=Rated VCEO IEBO VEB=5.0V BVCEO IC=50mA (MJE702T,703T,802T,803T) 80 BVCEO IC=50mA (MJE700T,701T,800T,801T) 60 VCE(SAT) IC=1.5A, IB=30mA (MJE700T,702T,800T,802T) VCE(SAT) IC=2.0A, IB=40mA (MJE701T,703T,801T,803T) VCE(SAT) IC=4.0A, IB=40mA VBE(ON) VCE=3.0V, IC=1.5A (MJE700T,702T,800T,802T) VBE(ON) VCE=3.0V, IC=2.0A (MJE701T,703T,801T,803T) VBE(ON) VCE=3.0V, IC=4.0A hFE VCE=3.0V, IC=1.5A (MJE700T,702T,800T,802T) 750 hFE VCE=3.0V, IC=2.0A (MJE701T,703T,801T,803T) 750 hFE VCE=3.0V, IC=4.0A 100 fT VCE=3.0V, IC=1.5A, f=1.0MHz 1.0 MAX 100 500 100 ...