MJE700T THRU MJE703T PNP MJE800T THRU MJE803T NPN
COMPLEMENTARY POWER DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m...
MJE700T THRU MJE703T
PNP MJE800T THRU MJE803T
NPN
COMPLEMENTARY POWER DARLINGTON
TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE700T, MJE800T series devices are medium power complementary silicon Darlington
transistors designed for audio amplifier applications as complementary output devices.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg ΘJC
MJE700T MJE701T MJE800T MJE801T
60
MJE702T MJE703T MJE802T MJE803T
80
60
80
5.0
4.0
100
50
-65 to +150
2.5
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICBO
VCB=Rated VCBO, TC=100°C
ICEO
VCE=Rated VCEO
IEBO
VEB=5.0V
BVCEO
IC=50mA (MJE702T,703T,802T,803T)
80
BVCEO
IC=50mA (MJE700T,701T,800T,801T)
60
VCE(SAT) IC=1.5A, IB=30mA (MJE700T,702T,800T,802T)
VCE(SAT) IC=2.0A, IB=40mA (MJE701T,703T,801T,803T)
VCE(SAT) IC=4.0A, IB=40mA
VBE(ON)
VCE=3.0V, IC=1.5A (MJE700T,702T,800T,802T)
VBE(ON)
VCE=3.0V, IC=2.0A (MJE701T,703T,801T,803T)
VBE(ON)
VCE=3.0V, IC=4.0A
hFE
VCE=3.0V, IC=1.5A (MJE700T,702T,800T,802T) 750
hFE
VCE=3.0V, IC=2.0A (MJE701T,703T,801T,803T) 750
hFE
VCE=3.0V, IC=4.0A
100
fT
VCE=3.0V, IC=1.5A, f=1.0MHz
1.0
MAX 100 500 100 ...