SOT23
PMBFJ308; PMBFJ309;
PMBFJ310
N-channel silicon field-effect transistors
Rev. 4 — 20 September 2011
Product dat...
SOT23
PMBFJ308; PMBFJ309;
PMBFJ310
N-channel silicon field-effect
transistors
Rev. 4 — 20 September 2011
Product data sheet
1. Product profile
CAUTION
1.1 General description
Symmetrical N-channel silicon junction field-effect
transistors in a SOT23 package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features and benefits
Low noise Interchangeability of drain and source connections High gain.
1.3 Applications
AM input stage in car radios VHF amplifiers Oscillators and mixers.
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS VGSoff
drain-source voltage gate-source cut-off voltage
PMBFJ308
PMBFJ309
PMBFJ310
Conditions
VDS = 10 V; ID = 1 A VDS = 10 V; ID = 1 A VDS = 10 V; ID = 1 A
Min Typ Max Unit - - 25 V
1 1 2 -
6.5 V 4 V 6.5 V
NXP Semiconductors
PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect
transistors
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
IDSS
Ptot yfs
drain current PMBFJ308 PMBFJ309 PMBFJ310
total power dissipation forward transfer admittance
VGS = 0 V; VDS = 10 V VGS = 0 V; VDS = 10 V VGS = 0 V; VDS = 10 V up to Tamb = 25 C VDS = 10 V; ID = 10 mA
Min Typ Max Unit
12 12 24 -10 -
60 mA 30 mA 60 mA 250 mW - mS
2. Pinning information
Table 2. Pin 1 2 3
Discrete pinning[1] Description source drain gate
Simplified outline Symbol
3
1
2
2
3
1
sym060
[1] Drain and...
