PMBFJ113

SOT23 PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 4 — 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features and benefits  High-speed switching  Interchangeability of drain and source connections  Low RDSon at zero gate voltage (< 30  for PMBFJ111). 1.3 Applications  Analog switches  Choppers  Commutators  Multiplexers  Thin and thick film hybrids. 2. Pinning information Table 1. Pin 1 2 3 Pinning Description[1] drain source gate Simplified outline Symbol 3 1 2 1 3 2 sym053 [1] Drain and source are interchangeable. NXP Semiconductors PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs 3. Ordering information Table 2. Ordering information Type number Package Name Description PMBFJ111 - plastic surface mounted package; 3 leads PMBFJ112 PMBFJ113 4. Marking Table 3. Marking Type number PMBFJ111 PMBFJ112 PMBFJ113 [1] * = p: Made in Hong Kong * = t: Made in Malaysia * = W: Made in China 5. Limiting values Marking code[1] 41* 42* 47* Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min VDS drain-source voltage (DC) - VGSO gate-source voltage - VGDO gate-drain voltage - IG forward gate current (DC) - Ptot total power dissipation Tamb = 25 C [1] - Tstg storage temperature 65 Tj junction temperature - [1] Mounted on a ceramic substrate, 8 ...