N-channel FET
SOT23
PMBFJ111; PMBFJ112;
PMBFJ113
N-channel junction FETs
Rev. 4 — 20 September 2011
Product data sheet
1. Product...
Description
SOT23
PMBFJ111; PMBFJ112;
PMBFJ113
N-channel junction FETs
Rev. 4 — 20 September 2011
Product data sheet
1. Product profile
1.1 General description
Symmetrical N-channel junction FETs in a SOT23 package.
1.2 Features and benefits
High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (< 30 for PMBFJ111).
1.3 Applications
Analog switches Choppers Commutators Multiplexers Thin and thick film hybrids.
2. Pinning information
Table 1. Pin 1 2 3
Pinning Description[1] drain source gate
Simplified outline Symbol
3
1
2
1
3
2
sym053
[1] Drain and source are interchangeable.
NXP Semiconductors
PMBFJ111; PMBFJ112; PMBFJ113
N-channel junction FETs
3. Ordering information
Table 2. Ordering information
Type number Package
Name Description
PMBFJ111
-
plastic surface mounted package; 3 leads
PMBFJ112
PMBFJ113
4. Marking
Table 3. Marking Type number PMBFJ111 PMBFJ112 PMBFJ113
[1] * = p: Made in Hong Kong * = t: Made in Malaysia * = W: Made in China
5. Limiting values
Marking code[1] 41* 42* 47*
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VDS
drain-source voltage (DC)
-
VGSO
gate-source voltage
-
VGDO
gate-drain voltage
-
IG
forward gate current (DC)
-
Ptot
total power dissipation
Tamb = 25 C
[1] -
Tstg
storage temperature
65
Tj
junction temperature
-
[1] Mounted on a ceramic substrate, 8 ...
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