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MRF6V2010GN Dataheets PDF



Part Number MRF6V2010GN
Manufacturers NXP
Logo NXP
Description RF Power FET
Datasheet MRF6V2010GN DatasheetMRF6V2010GN Datasheet (PDF)

NXP Semiconductors Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.  Typical CW performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W Power gain — 23.9 dB Drain efficiency — 62%  Capable of handling 10:1 VSWR @ 50 Vdc, 220 MHz, 10 W CW output.

  MRF6V2010GN   MRF6V2010GN


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