Document
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WLL applications.
• Typical 2--carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 30 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 15.5 dB Drain Efficiency — 27.5% IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — --41 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 140 Watts CW Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6S21140H Rev. 5, 2/2010
MRF6S21140HR3 MRF6S21140HSR3
2110--2170 MHz, 30 W AVG., 28 V 2 x W--CDMA
LATERAL N--CHANNEL RF POWER MOSFETs
CASE 465B--03, STYLE 1 NI--880
MRF6S21140HR3
CASE 465C--02, STYLE 1 NI--880S
MRF6S21140HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2)
VDSS
--0.5, +68
Vdc
VGS
--0.5, +12
Vdc
Tstg
-- 65 to +150
°C
TC
150
°C
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case Case Temperature 80°C, 140 W CW Case Temperature 75°C, 30 W CW
RθJC
0.35 0.38
°C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product. 3. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2004--2007, 2010. All rights reserved.
RF Device Data Freescale Semiconductor
MRF6S21140HR3 MRF6S21140HSR3 1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc)
Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
—
—
10
μAdc
IDSS
—
—
1
μAdc
IGSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc)
Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test)
Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3 Adc)
Dynamic Characteristics (1)
Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
VGS(th)
1
2
3
Vdc
VGS(Q)
2
2.8
4
Vdc
VDS(on)
0.1
0.21
0.3
Vdc
Crss
—
2
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 30 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz, 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz
Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
14.5
15.5
17.5
dB
Drain Efficiency
ηD
26
27.5
—
%
Intermodulation Distortion
IM3
—
--37
--35
dBc
Adjacent Channel Power Ratio
ACPR
—
--41
--38
dBc
Input Return Loss
IRL
—
--15
--9
dB
1. Part is internally matched both on input and output.
MRF6S21140HR3 MRF6S21140HSR3 2
RF Device Data Freescale Semiconductor
VBIAS
R1
C5
R2
C4
C3
Z5
RF INPUT
Z1 C1
R3
Z2
Z3
Z4
DUT
C19
C2
Z6 VSUPPLY
+
C10
C12
C13
C16
C17
Z8
Z9
RF
C9
OUTPUT
Z10 Z11
Z12 Z13
C8
C18
C6 C7
Z7
C11
C14
C15
Z1 Z2 Z3 Z4 Z5
Z6, Z7
0.250″ x 0.083″ Microstrip 1.177″ x 0.083″ Microstrip 0.443″ x 0.083″ Microstrip 0.276″ x 0.787″ Microstrip 0.786″ x 0.083″ Microstrip
(quarter wave length for bias purpose) 0.833″ x 0.083″ Microstrip
(quarter wave length for supply purpose)
Z8 Z9 Z10 Z11, Z12 Z13 PCB
0.531″ x 1.000″ Microstrip 0.308″ x 0.083″ Microstrip 0.987″ x 0.083″ Microstrip 0.070″ x 0.220″ Microstrip 0.160″ x 0.083″ Microstrip Taconic TLX8--0300, 0.030″, εr = 2.55
Figure 1. MRF6S21140HR3(HSR3) Test Circuit Schematic
Table 5. MRF6S21140HR3(HSR3) Test Circuit Component Designations and Values
.