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MRF6S21140HSR3 Dataheets PDF



Part Number MRF6S21140HSR3
Manufacturers NXP
Logo NXP
Description RF Power FET
Datasheet MRF6S21140HSR3 DatasheetMRF6S21140HSR3 Datasheet (PDF)

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WLL applications. • Typical 2--carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 30 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WLL applications. • Typical 2--carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 30 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 15.5 dB Drain Efficiency — 27.5% IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — --41 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 140 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRF6S21140H Rev. 5, 2/2010 MRF6S21140HR3 MRF6S21140HSR3 2110--2170 MHz, 30 W AVG., 28 V 2 x W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs CASE 465B--03, STYLE 1 NI--880 MRF6S21140HR3 CASE 465C--02, STYLE 1 NI--880S MRF6S21140HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) VDSS --0.5, +68 Vdc VGS --0.5, +12 Vdc Tstg -- 65 to +150 °C TC 150 °C TJ 225 °C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 80°C, 140 W CW Case Temperature 75°C, 30 W CW RθJC 0.35 0.38 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2004--2007, 2010. All rights reserved. RF Device Data Freescale Semiconductor MRF6S21140HR3 MRF6S21140HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IDSS — — 10 μAdc IDSS — — 1 μAdc IGSS — — 1 μAdc On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) VGS(th) 1 2 3 Vdc VGS(Q) 2 2.8 4 Vdc VDS(on) 0.1 0.21 0.3 Vdc Crss — 2 — pF Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 30 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz, 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 14.5 15.5 17.5 dB Drain Efficiency ηD 26 27.5 — % Intermodulation Distortion IM3 — --37 --35 dBc Adjacent Channel Power Ratio ACPR — --41 --38 dBc Input Return Loss IRL — --15 --9 dB 1. Part is internally matched both on input and output. MRF6S21140HR3 MRF6S21140HSR3 2 RF Device Data Freescale Semiconductor VBIAS R1 C5 R2 C4 C3 Z5 RF INPUT Z1 C1 R3 Z2 Z3 Z4 DUT C19 C2 Z6 VSUPPLY + C10 C12 C13 C16 C17 Z8 Z9 RF C9 OUTPUT Z10 Z11 Z12 Z13 C8 C18 C6 C7 Z7 C11 C14 C15 Z1 Z2 Z3 Z4 Z5 Z6, Z7 0.250″ x 0.083″ Microstrip 1.177″ x 0.083″ Microstrip 0.443″ x 0.083″ Microstrip 0.276″ x 0.787″ Microstrip 0.786″ x 0.083″ Microstrip (quarter wave length for bias purpose) 0.833″ x 0.083″ Microstrip (quarter wave length for supply purpose) Z8 Z9 Z10 Z11, Z12 Z13 PCB 0.531″ x 1.000″ Microstrip 0.308″ x 0.083″ Microstrip 0.987″ x 0.083″ Microstrip 0.070″ x 0.220″ Microstrip 0.160″ x 0.083″ Microstrip Taconic TLX8--0300, 0.030″, εr = 2.55 Figure 1. MRF6S21140HR3(HSR3) Test Circuit Schematic Table 5. MRF6S21140HR3(HSR3) Test Circuit Component Designations and Values .


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