MRF6V2300NR1

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts, f = 220 MHz Power Gain — 25.5 dB Drain Efficiency — 68% Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW Output Power Features Characterized with Series Equivalent Large--Signal Impedance Parameters Qualified Up to a Maximum of 50 VDD Operation Integrated ESD Protection 225°C Capable Plastic Package RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Document Number: MRF6V2300N Rev. 5, 4/2010 MRF6V2300NR1 MRF6V2300NBR1 10--600 MHz, 300 W, 50 V LATERAL N--CHANNEL SINGLE--ENDED BROADBAND RF POWER MOSFETs CASE 1486--03, STYLE 1 TO--270 WB--4 PLASTIC MRF6V2300NR1 CASE 1484--04, STYLE 1 TO--272 WB--4 PLASTIC MRF6V2300NBR1 PARTS ARE SINGLE--ENDED Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 83°C, 300 W CW Symbol VDSS VGS Tstg TC TJ Value --0.5, +110 --0.5, +10 -- 65 to +150 150 225 Unit Vdc Vdc °C °C °C Symbol Valu...