Power Amplifier
Freescale Semiconductor Technical Data
Document Number: MW7IC2725N Rev. 3, 1/2010
RF LDMOS Wideband Integrated
Power A...
Description
Freescale Semiconductor Technical Data
Document Number: MW7IC2725N Rev. 3, 1/2010
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC2725N wideband integrated circuit is designed with on- chip matching that makes it usable from 2300- 2700 MHz. This multi- stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.
Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ąPower Gain — 28.5 dB ąPower Added Efficiency — 17% ąDevice Output Signal PAR — 9 dB @ 0.01% Probability on CCDF ąACPR @ 8.5 MHz Offset — -50 dBc in 1 MHz Channel Bandwidth
Driver Applications
Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 26 dBm Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ąPower Gain — 27.8 dB ąPower Added Efficiency — 3.2% ąDevice Output Signal PAR — 9 dB @ 0.01% Probability on CCDF ąACPR @ 8.5 MHz Offset — -56 dBc in 1 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 40 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 5 W CW Pout
Typical Pout @ 1 dB Compression Point ] 25 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Ca...
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