MW7IC2220NBR1

Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on--chip matching that makes it usable from 2000 to 2200 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD--SCDMA. Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1 = 80 mA, IDQ2 = 300 mA, Pout = 2 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 31 dB Power Added Efficiency — 13% ACPR @ 5 MHz Offset — --50 dBc in 3.84 MHz Bandwidth Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 20 Watts CW Output Power Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 5 Watts CW Pout. Typical Pout @ 1 dB Compression Point ' 20 Watts CW Features Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) Integrated ESD Protection 225°C Capable Plastic Package RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel. Document Number: MW7IC2220N Rev. 2, 5/2011 MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 2110--2170 MHz, 2 W Avg., 28 V SINGLE W--CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS...