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TEA2208T

NXP

Active bridge rectifier controller

TEA2208T Active bridge rectifier controller Rev. 1.4 — 14 April 2021 Product data sheet 1 General description The TEA2...


NXP

TEA2208T

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Description
TEA2208T Active bridge rectifier controller Rev. 1.4 — 14 April 2021 Product data sheet 1 General description The TEA2208T is the first product of a new generation of active bridge rectifier controllers replacing the traditional diode bridge. Using the TEA2208T with low-ohmic high-voltage external MOSFETs significantly improves the efficiency of the power converter as the typical rectifier diode-forward conduction losses are eliminated. Efficiency can improve up to about 1.4 % at 90 V (AC) mains voltage. The TEA2208T is designed in a silicon-on insulator (SOI) process. 2 Features and benefits 2.1 Efficiency features Forward conduction losses of the diode rectifier bridge are eliminated Very low IC power consumption (2 mW). 2.2 Application features Integrated high-voltage level shifters Directly drives all four rectifier MOSFETs Very low external part count Integrated X-capacitor discharge (2 mA) Self-supplying Full-wave drive improving total harmonic distortion (THD) S014 package 2.3 Control features Undervoltage lockout (UVLO) for high-side and low-side drivers Drain-source overvoltage protection for all external power MOSFETs Gate pull-down currents at start-up for all external power MOSFETs NXP Semiconductors TEA2208T Active bridge rectifier controller 3 Applications The TEA2208T is intended for power supplies with a boost-type power-factor controller as a first stage. The second stage can be a resonant controller, a flyback controller, or any...




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