AFSC5G37D37

NXP Semiconductors Technical Data Power Amplifier Module for LTE and 5G The AFSC5G37D37 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells, and low power remote radio heads. The field--proven LDMOS power amplifiers are designed for TDD and FDD LTE systems.  Typical LTE Performance: Pout = 5.7 W Avg., VDD = 29 Vdc, 1  20 MHz LTE, Input Signal PAR = 8 dB @ 0.01% Probability on CCDF.(1) Carrier Center Frequency Gain (dB) ACPR (dBc) PAE (%) 3600 MHz 29.5 –32.3 39.3 3700 MHz 29.7 –33.6 38.8 3800 MHz 29.9 –34.4 37.6 1. All data measured with device soldered in NXP reference circuit. Features  Frequency: 3600–3800 MHz  Advanced high performance in--package Doherty  Fully matched (50 ohm input/output, DC blocked)  Designed for low complexity analog or digital linearization systems Document Number: AFSC5G37D37 Rev. 0, 08/2019 AFSC5G37D37 3600–3800 MHz, 29 dB, 5.7 W Avg. AIRFAST POWER AMPLIFIER MODULE 10 mm  6 mm Module  2019 NXP B.V. RF Device Data NXP Semiconductors AFSC5G37D37 1 19 GND 20 GND 21 GND 22 GND 23 GND 24 GND 25 GND 26 GND Pin 1 index area GND 1 N.C. 2 VDP2(1) 3 VDP1 4 RFin 5 18 GND 17 RFout 16 GND 15 GND 14 GND GND 13 N.C. 12 VDC2(1) 11 VDC1 10 VGC2 9 VGC1 8 VGP1 7 VGP2 6 (Top View) 13 12 11 10 9 8 7 6 5 14 4 15 3 27 16 2 17 1 18 ...