Intelligent integrated precision battery sensor
NXP Semiconductors Data Sheet: Technical Data
Document Number: MM912_637D1 Rev. 5.0, 8/2016
Intelligent integrated pre...
Description
NXP Semiconductors Data Sheet: Technical Data
Document Number: MM912_637D1 Rev. 5.0, 8/2016
Intelligent integrated precision battery sensor
MM912_637
The MM912I637 (96 kB) and MM912J637 (128 kB) are fully integrated LIN Battery monitoring devices, based on NXP SMARTMOS and S12 MCU Technology.
The device supports precise current measurement via an external shunt resistor, and precise battery voltage measurement via a series resistor directly at the battery plus pole. The integrated temperature sensor combined in the close proximity to the battery, allows battery temperature measurement.
The integrated LIN 2.1 interface makes the sensor feedback available on the LIN Bus.
Features
Battery voltage measurement Battery current measurement in up to 8 ranges On chip temperature measurement Normal and two low-power modes Current threshold detection and current averaging in standby => wake-up
from low-power mode Triggered wake-up from LIN and periodic wake-up Signal low pass filtering (current, voltage) PGA (programmable low-noise gain amplifier) with automatic gain control Accurate internal oscillator (an external quartz oscillator may be used for
extended accuracy) Communication via a LIN 2.1, LIN2.0 bus interface S12 microcontroller with 128 kByte flash, 6.0 kByte RAM, 4.0 kByte data flash Background debug module External temperature sensor option (TSUP, VTEMP) Optional 2nd external voltage sense input (VOPT) 4 x 5.0 V GPIO including one wake-up cap...
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