Freescale Semiconductor Technical Data
RF Power LDMOS Transistor
High Ruggedness N--Channel Enhancement--Mode Lateral M...
Freescale Semiconductor Technical Data
RF Power LDMOS
Transistor
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET
Designed for handheld two--way radio applications with frequencies from 1.8 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in handheld radio equipment.
Wideband Performance (7.5 Vdc, TA = 25C, CW)
Frequency
Pin
Gps
D
Pout
(MHz)
(dBm)
(dB)
(%)
(W)
136–174 (1,4)
17.8
17.1
67.1
3.2
350–520 (2,4)
20.0
15.1
73.0
3.2
Narrowband Performance (7.5 Vdc, TA = 25C, CW)
Frequency (MHz)
Gps
D
Pout
(dB)
(%)
(W)
520 (3)
20.8
68.3
3.0
Load Mismatch/Ruggedness
Frequency Signal
(MHz)
Type
VSWR
Pin (dBm)
Test Voltage
Result
520 (3)
CW > 65:1 at all Phase Angles
21.1
9.0
No Device
Degradation
1. Measured in 136–174 MHz VHF broadband reference circuit. 2. Measured in 350–520 MHz UHF broadband reference circuit. 3. Measured in 520 MHz narrowband production test circuit. 4. The values shown are the center band performance numbers across the indicated
frequency range.
Features
Characterized for Operation from 1.8 to 941 MHz Unmatched Input and Output Allowing Wide Frequency Range Utilization Integrated ESD Protection Integrated Stability Enhancements Wideband — Full Power Across the Band Exceptional Thermal Performance Extreme Ruggedness
Typical Applications
Output Stage VHF Band Handheld Radio Output Stag...