MMZ25332BT1

NXP Semiconductors Technical Data Document Number: MMZ25332B Rev. 3, 11/2017 Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ25332B is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, WLAN (802.11g/n), W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W--CDMA air interfaces with an ACPR of –50 dBc at an output power of up to 22 dBm, covering frequencies from 1500 to 2800 MHz. It operates from a supply voltage of 3 to 5 V. The amplifier is fully input matched, requires minimal external matching on the output and is housed in a cost--effective, surface mount QFN 3  3 package. The device offers state--of--the--art reliability, ruggedness, temperature stability and ESD performance.  Typical Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 400 mA Frequency Pout (dBm) Gps (dB) ACPR (dBc) PAE (%) Test Signal 2140 MHz 22 27.0 –50.0 7.0 W--CDMA 2620 MHz 21 26.0 –50.0 5.0 LTE 20 MHz MMZ25332BT1 1500–2800 MHz, 26.5 dB, 33 dBm InGaP HBT LINEAR AMPLIFIER QFN 3  3--12L Features  Frequency: 1500–2800 MHz  P1dB: 33 dBm @ 2500 MHz  Power gain: 26.5 dB @ 2500 MHz  OIP3: 48 dBm @ 2500 MHz  EVM ≤ 3% @ 23.5 dBm Pout, WLAN (802.11g)  Active bias control (adjustable externally)  Power down control via VBIAS pin  Class 3A HBM ESD rating  Single 3 to 5 V supply  Single--ended power detector  Cost--effective 12--pin,...