MMZ27333BT1

NXP Semiconductors Technical Data 2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT The MMZ27333B is a versatile 3--stage power amplifier targeted at driver and pre--driver applications for macro and micro base stations and final--stage applications for small cells. Its versatile design allows operation in any frequency band from 1500 to 2700 MHz providing gain of more than 35 dB. The device operates off a 5 V supply, and its bias currents and portions of the matching networks are adjustable for optimum performance in any specific application. It is housed in a QFN 4 × 4 surface mount package. Typical PA Driver Performance: VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, ICQ = 430 mA. Frequency Pout (dBm) Gps (dB) ACPR (dBc) ICC Total Test Signal 2140 MHz 22.3 35.8 –48.0 499 W--CDMA 2600 MHz 21.3 36.1 –48.0 498 LTE 20 MHz Features P1dB: up to 33 dBm Gain: More than 35 dB 5 V Supply Excellent Linearity High Efficiency Single--ended Power Detector Band Tunable Cost--effective 24--pin, 4 mm QFN surface mount plastic package Document Number: MMZ27333B Rev. 1, 02/2017 MMZ27333BT1 1500–2700 MHz, 35 dB, 33 dBm InGaP HBT LINEAR AMPLIFIER QFN 4 × 4 RFin1 VCC1/ RFout1 RFin2 VCC2 PDET BIAS CIRCUIT VCC3/RFout3 VCC3/RFout3 VCC3/RFout3 VBA1 VBA2 VBIAS Figure 1. Functional Block Diagram © 2016–2017 NXP B.V. RF Device Data NXP Semiconductors MMZ27333BT1 1 Table 1. Maximum Ratings Rating Symbol Value Unit Supply Voltage Supp...