Freescale Semiconductor Technical Data
Heterojunction Bipolar Transistor Technology (InGaP HBT)
High Efficiency/Lineari...
Freescale Semiconductor Technical Data
Heterojunction Bipolar
Transistor Technology (InGaP HBT)
High Efficiency/Linearity Amplifier
The MMZ09332B is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, smart grid, W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W--CDMA air interfaces with an ACPR of –50 dBc at an output power of up to 23 dBm, covering frequencies from 130 to 1000 MHz. It operates from a supply voltage of 3 to 5 volts. The amplifier requires minimal external matching and offers state--of--the--art reliability, ruggedness, temperature stability and ESD performance.
Typical PA Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 140 mA
Frequency
Pout (dBm)
Gps (dB)
ACPR (dBc)
ICC (mA)
Test Signal
748 MHz
23
30.9
–49.6
315
W--CDMA
942 MHz
22
27.1
–50.4
240
W--CDMA
Typical PA Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 110 mA
Frequency
Pout (dBm)
Gps (dB)
PAE (%)
Test Signal
450 MHz
32.3
37.2
45.5 @ 5 V
CW
30.3 @ 3.6 V 26.3 @ 3.6 V 53.7 @ 3.6 V
760 MHz
32.2
30.8
40.0 @ 5 V
CW
Features
Frequency: 130–1000 MHz P1dB: 33 dBm, 450 to 1000 MHz OIP3: up to 48 dBm @ 900 MHz Excellent Linearity Active Bias Control (adjustable externally) Single 3 to 5 V Supply Single--ended Power Detector Cost--effective 12--pin 3 mm QFN Surface Mount Plastic Package
Power VBA1 VBA2 VBIAS Down
VCC1
ACTIVE BIAS WITH POWER DOWN
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