A2I09VD015GNR1

NXP Semiconductors Technical Data Document Number: A2I09VD015N Rev. 0, 06/2018 RF LDMOS Wideband Integrated Power Amplifiers The A2I09VD015N wideband integrated circuit is designed with on--chip matching that makes it usable from 575 to 960 MHz. This multi -- stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats. 900 MHz  Typical Single--Carrier W--CDMA Characterization Performance: VDD = 48 Vdc, IDQ1(A+B) = 16 mA, IDQ2(A+B) = 84 mA, Pout = 2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1) Frequency Gps (dB) PAE (%) ACPR (dBc) 920 MHz 940 MHz 960 MHz 32.9 19.3 –45.9 33.0 19.7 –45.5 32.8 19.6 –44.9 Features  On--chip matching (50 ohm input, DC blocked)  Integrated quiescent current temperature compensation with enable/disable function (2)  Designed for digital predistortion error correction systems  Optimized for Doherty applications A2I09VD015NR1 A2I09VD015GNR1 575–960 MHz, 2 W AVG., 48 V AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS TO--270WB--15 PLASTIC A2I09VD015NR1 TO--270WBG--15 PLASTIC A2I09VD015GNR1 VDS1A RFinA VGS1A VGS2A VGS1B VGS2B RFinB VDS1B Quiescent Current Temperature Compensation (2) Quiescent Current Temperature Compensation (2) Figure 1. Functional Block Diagram RFout1/VDS2A RFout2/VDS2B VDS1A 1 VGS2A 2 VGS1A 3 RFinA 4 N.C. 5 N.C. 6 N.C. 7 N.C. 8 RFinB 9 VGS1B 10 VGS2B 11 VDS1B 12 15 RFout1/VDS2A 14 N.C. 13 RFout2/VDS2...