Freescale Semiconductor Technical Data
RF Power LDMOS Transistor
High Ruggedness N--Channel Enhancement--Mode Lateral M...
Freescale Semiconductor Technical Data
RF Power LDMOS
Transistor
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET
Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device makes it ideal for large--signal, common--source amplifier applications in handheld radio equipment.
Narrowband Performance (7.5 Vdc, IDQ = 100 mA, TA = 25C, CW)
Frequency (MHz)
Gps
D
Pout
(dB)
(%)
(W)
870 (1)
15.2
71.0
7.3
Wideband Performance (7.5 Vdc, TA = 25C, CW)
Frequency (MHz)
Pin
Gps
D
Pout
(W)
(dB)
(%)
(W)
136–174 350–470 (2,5) 450–520 (3,5) 760–860 (4,5)
0.25
14.6
69.0
7.2
0.20
15.6
60.9
7.3
0.22
15.4
56.0
7.5
0.23
15.1
48.1
7.5
Load Mismatch/Ruggedness
Frequency Signal
(MHz)
Type
VSWR
Pin
Test
(W)
Voltage Result
870 (1)
CW > 65:1 at all
0.4
Phase Angles (3 dB Overdrive)
10.8 No Device Degradation
1. Measured in 870 MHz narrowband test circuit. 2. Measured in 350–470 MHz UHF broadband reference circuit. 3. Measured in 450–520 MHz UHF broadband reference circuit. 4. Measured in 760–860 MHz UHF broadband reference circuit. 5. The values shown are the minimum measured performance numbers across the
indicated frequency range.
Features
Characterized for Operation from 136 to 941 MHz Unmatched Input and Output Allowing Wide Frequency Range Utilization Integrated ESD Protection Integrated Stability Enhancements Wideband — Full Pow...
