AFM906N

NXP Semiconductors Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in handheld radio equipment. Wideband Performance (In 440–520 MHz reference circuit, 7.5 Vdc, TA = 25C, CW) Frequency Pin Gps D Pout (MHz) (W) (dB) (%) (W) 440–520 (1,2) 0.16 16.2 62.0 6.5 Narrowband Performance (7.5 Vdc, TA = 25C, CW) Frequency (MHz) Gps D Pout (B) (%) (W) 520 (3) 20.3 70.8 6.8 Load Mismatch/Ruggedness Frequency Signal (MHz) Type VSWR Pin (dBm) Test Voltage Result 520 (3) CW > 65:1 at all 21 Phase Angles (3 dB Overdrive) 10.8 No Device Degradation 1. Measured in 440–520 MHz broadband reference circuit (page 6). 2. The values shown are the minimum measured performance numbers across the indicated frequency range. 3. Measured in 520 MHz narrowband production test fixture (page 9). Features  Characterized for operation from 136 to 941 MHz  Unmatched input and output allowing wide frequency range utilization  Integrated ESD protection  Integrated stability enhancements  Wideband — full power across the band  Exceptional thermal performance  Extreme ruggedness  High linearity for: TETRA, SSB Typical Applications  Output stage VHF band handheld radio  Output stage UHF...