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UA1B Dataheets PDF



Part Number UA1B
Manufacturers SMC-Diode
Logo SMC-Diode
Description Ultrafast Avalanche Diode
Datasheet UA1B DatasheetUA1B Datasheet (PDF)

Technical Data Data Sheet N1509, Rev. A SMA UA1A-UA1M UA1A-UA1M Ultrafast Avalanche Diodes Features  Ideally Suited for Automatic Assembly  Low Forward Overload Drop, High Efficiency  Low Power Loss  Super-Fast Recovery Time  Plastic Material has UL Classification 94V-O  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional testing can be offered upon request Circuit Diagram Mechanical Data  Case: Low Profile Molded Plastic  Terminals: Solder Plated, S.

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Technical Data Data Sheet N1509, Rev. A SMA UA1A-UA1M UA1A-UA1M Ultrafast Avalanche Diodes Features  Ideally Suited for Automatic Assembly  Low Forward Overload Drop, High Efficiency  Low Power Loss  Super-Fast Recovery Time  Plastic Material has UL Classification 94V-O  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional testing can be offered upon request Circuit Diagram Mechanical Data  Case: Low Profile Molded Plastic  Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026  Polarity: Cathode Band or Cathode Notch  Weight: 0.06 grams(approx) Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Characteristic Symbol UA1A UA1B UA1D UA1G UA1J UA1K UA1M Units Peak Repetitive Reverse Voltage Surge Peak Reverse Voltage Max. Average Forward Current @TL =100°C Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Maximum Forward voltage @IF =1.0A VRRM 50 100 200 400 600 800 1000 V VRSM 50 100 200 400 600 800 1000 IF 1.0 A IFSM 30 A VF 1 1.25 1.7 V Maximum Leakage Current @TA = 25°C IR Reverse Recovery Time (Note 1) Max. thermal resistance junction to ambient (Note 2) Non-Repetitive Avalanche Energy(Note 3) Operating Junction and Storage Temperature Range Note: 1. Measured with IF=0.5A, IR=1.0A, Irr=0.25A 2. Mounted on P.C. Board with 8.0mm2 lead area 3. TJ = 25°C, IAS=1.0mA, L=285mH Trr RΘJA EAS TJ,TSTG 3 µA 50 70 20 75 ns K/W mJ -55 to +150 °C  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  Technical Data Data Sheet N1509, Rev. A Ratings and Characteristics Curves UA1A-UA1M  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  Technical Data Data Sheet N1509, Rev. A Mechanical Dimensions SMA UA1A-UA1M SYMBOL A B C D E F G H Millimeters Min. Max. 2.40 2.84 3.99 4.75 1.05 1.70 0.15 0.51 4.80 5.66 1.90 2.95 0.05 0.203 0.76 1.52 Inches Min. Max. 0.094 0.157 0.041 0.112 0.187 0.067 0.006 0.020 0.189 0.075 0.002 0.223 0.116 0.008 0.030 0.600 Ordering Information Device UA1A-UA1M Package SMA (Pb-Free) Shipping 5000pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification. Carrier Tape Specification SMA Marking Diagram Where XXXXX is YYWWL UA = Device Type 1 = Forward Current (1A) A = Reverse Voltage (50V) YY = Year WW = Week L = Lot Number Cautions:Molding resin Epoxy resin UL:94V-0 SYMBOL A B C d E F P P0 P1 T W Millimeters Min. 2.97 5.70 2.32 1.40 1.40 5.60 3.90 3.90 1.90 0.25 Max. 3.17 5.90 2.52 1.60 1.60 5.70 4.10 4.10 2.10 0.35 11.80 12.20  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  Technical Data Data Sheet N1509, Rev. A UA1A-UA1M DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When expo.


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