UA1K

Technical Data Data Sheet N1509, Rev. A SMA UA1A-UA1M UA1A-UA1M Ultrafast Avalanche Diodes Features  Ideally Suited for Automatic Assembly  Low Forward Overload Drop, High Efficiency  Low Power Loss  Super-Fast Recovery Time  Plastic Material has UL Classification 94V-O  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional testing can be offered upon request Circuit Diagram Mechanical Data  Case: Low Profile Molded Plastic  Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026  Polarity: Cathode Band or Cathode Notch  Weight: 0.06 grams(approx) Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Characteristic Symbol UA1A UA1B UA1D UA1G UA1J UA1K UA1M Units Peak Repetitive Reverse Voltage Surge Peak Reverse Voltage Max. Average Forward Current @TL =100°C Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Maximum Forward voltage @IF =1.0A VRRM 50 100 200 400 600 800 1000 V VRSM 50 100 200 400 600 800 1000 IF 1.0 A IFSM 30 A VF 1 1.25 1.7 V Maximum Leakage Current @TA = 25°C IR Reverse Recovery Time (Note 1) Max. thermal resistance junction to ambient (Note 2) Non-Repetitive Avalanche Energy(Note 3) Operating Junction and Storage Temperature Range Note: 1. Measured with IF=0.5A, IR=1.0A, Irr=0.25A 2. Mounted on P.C. Board with 8.0mm2 lead area 3. TJ = 25°C, IAS=1.0mA, L=285mH Trr RΘJA EAS TJ,TSTG 3 µA 50 70 20 75 n...