LDMOS Transistor. AFT09MS031GNR1 Datasheet

AFT09MS031GNR1 Transistor. Datasheet pdf. Equivalent

Part AFT09MS031GNR1
Description RF Power LDMOS Transistor
Feature Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhanc.
Manufacture NXP
Datasheet
Download AFT09MS031GNR1 Datasheet



AFT09MS031GNR1
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
Designed for mobile two--way radio applications with frequencies from
764 to 941 MHz. The high gain, ruggedness and broadband performance of
these devices make them ideal for large--signal, common source amplifier
applications in mobile radio equipment.
Narrowband Performance (13.6 Vdc, IDQ = 500 mA, TA = 25°C, CW)
Frequency
(MHz)
Gps
(dB)
ηD
P1dB
(%)
(W)
764
18.0
74.1
32
870
17.2
71.0
31
941
15.7
68.1
31
800 MHz Broadband Performance (13.6 Vdc, IDQ = 100 mA, TA = 25°C, CW)
Frequency
(MHz)
Gps
(dB)
ηD
P1dB
(%)
(W)
760
15.7
62.0
44
820
15.7
63.0
37
870
15.5
61.0
36
Load Mismatch/Ruggedness
Frequency Signal
(MHz)
Type
VSWR
Pin
Test
(W)
Voltage Result
870 (1)
CW >65:1 at all
1.2
Phase Angles (3 dB Overdrive)
17
No Device
Degradation
870 (2)
2.0
(3 dB Overdrive)
1. Measured in 870 MHz narrowband test circuit.
2. Measured in 760--870 MHz broadband reference circuit.
Features
Characterized for Operation from 764 to 941 MHz
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated ESD Protection
Integrated Stability Enhancements
Wideband — Full Power Across the Band (764–870 MHz)
225°C Capable Plastic Package
Exceptional Thermal Performance
High Linearity for: TETRA, SSB, LTE
Cost--effective Over--molded Plastic Packaging
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.
Typical Applications
Output Stage 800 MHz Trunking Band Mobile Radio
Output Stage 900 MHz Trunking Band Mobile Radio
Document Number: AFT09MS031N
Rev. 1, 8/2012
AFT09MS031NR1
AFT09MS031GNR1
764--941 MHz, 31 W, 13.6 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
TO--270--2
PLASTIC
AFT09MS031NR1
TO--270--2 GULL
PLASTIC
AFT09MS031GNR1
Gate
Drain
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
© Freescale Semiconductor, Inc., 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS031NR1 AFT09MS031GNR1
1



AFT09MS031GNR1
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range (1,2)
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Symbol
VDSS
VGS
VDD
Tstg
TC
TJ
PD
Value
--0.5, +40
--6.0, +12
17, +0
--65 to +150
--40 to +150
--40 to +225
317
1.59
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 31 W CW, 13.6 Vdc, IDQ = 500 mA, 870 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Symbol
RθJC
Value (2,3)
0.63
Class
2, passes 2500 V
A, passes 100 V
IV, passes 1200 V
Unit
°C/W
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 40 Vdc, VGS = 0 Vdc)
IDSS
2
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 13.6 Vdc, VGS = 0 Vdc)
IDSS
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
600
nAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 115 μAdc)
VGS(th)
1.6
2.1
2.6
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.2 Adc)
VDS(on)
0.1
Vdc
Forward Transconductance
(VGS = 10 Vdc, ID = 10 Adc)
gfs
7.8
S
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
AFT09MS031NR1 AFT09MS031GNR1
2
RF Device Data
Freescale Semiconductor, Inc.







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