Freescale Semiconductor Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral ...
Freescale Semiconductor Technical Data
RF Power LDMOS
Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
Designed for mobile two--way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier applications in mobile radio equipment.
Narrowband Performance (13.6 Vdc, IDQ = 500 mA, TA = 25°C, CW)
Frequency (MHz)
Gps (dB)
ηD
P1dB
(%)
(W)
764
18.0
74.1
32
870
17.2
71.0
31
941
15.7
68.1
31
800 MHz Broadband Performance (13.6 Vdc, IDQ = 100 mA, TA = 25°C, CW)
Frequency (MHz)
Gps (dB)
ηD
P1dB
(%)
(W)
760
15.7
62.0
44
820
15.7
63.0
37
870
15.5
61.0
36
Load Mismatch/Ruggedness
Frequency Signal
(MHz)
Type
VSWR
Pin
Test
(W)
Voltage Result
870 (1)
CW >65:1 at all
1.2
Phase Angles (3 dB Overdrive)
17
No Device
Degradation
870 (2)
2.0 (3 dB Overdrive)
1. Measured in 870 MHz narrowband test circuit. 2. Measured in 760--870 MHz broadband reference circuit.
Features
Characterized for Operation from 764 to 941 MHz Unmatched Input and Output Allowing Wide Frequency Range Utilization Integrated ESD Protection Integrated Stability Enhancements Wideband — Full Power Across the Band (764–870 MHz) 225°C Capable Plastic Package Exceptional Thermal Performance High Linearity for: TETRA, SSB, LTE Cost--effective Over--molded Plastic Packaging In Tape and Reel. R1 Suffix = 500 Un...
