P-Channel MOSFET. SIL2301 Datasheet

SIL2301 MOSFET. Datasheet pdf. Equivalent

Part SIL2301
Description Dual P-Channel MOSFET
Feature Features • TrenchFET Power MOSFET • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity.
Manufacture MCC
Datasheet
Download SIL2301 Datasheet




SIL2301
Features
TrenchFET Power MOSFET
Epoxy Meets UL 94 V-0 Flammability Rating
Moisture Sensitivity Level 1
• Halogen Free Available Upon Request By Adding Suffix "-HF"
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
SIL2301
Dual
P-Channel MOSFET
Maximum Ratings
• Operating Junction Temperature Range : -55oC to +150oC
• Storage Temperature Range: -55oC to +150oC
• Maximum Thermal Resistance: 100oC/W Junction to Ambient
Parameter
Symbol Rating
Unit
Drain -source Voltage
Gate -Source Voltage
VDS
-20V
V
VGS
±8
V
Drain Current-Continuous
Drain Current-Pulse(Note 2)
Power Dissipation
ID
-2.3
A
IDM
-10
A
PD
1.25
W
Internal Structure
D1
S1
D2
6
5
4
1
G1
2
S2
3
G2
Marking: S1
SOT23-6L
G
654
1 23
BC
A
H
K
M
J
D
L
DIMENSIONS
DIM
INCHES
MM
MIN MAX MIN MAX
A 0.012 0.020 0.30 0.50
B 0.051 0.070 1.30 1.80
C 0.087 0.126 2.20 3.20
D
0.037
0.95
G
0.074
1.90
H 0.106 0.122 2.70 3.10
J 0.002 0.006 0.05 0.15
K 0.030 0.051 0.75 1.30
L 0.012 0.024 0.30 0.60
M 0.003 0.008 0.08 0.22
NOTE
TYP.
TYP.
Rev.3-3-09182019
1/4
MCCSEMI.COM



SIL2301
SIL2301
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol
Test conditions
Static Characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250µA
Gate-Threshold Voltage(Note 1)
VGS(th) VDS=VGS, ID=-250µA
Gate-Body Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-Resistance(Note 1) RDS(on)
Forward Tranconductance(Note 1)
gFS
Diode Forward Voltage(Note 1)
VSD
Dynamic Characteristics(Note 2)
VGS 8V, VDS =0V
VDS =-20V, VGS =0V
VGS=-4.5V, ID=-2.5A
VGS=-2.5V, ID=-2.0A
VGS=-1.8V, ID=-1.6A
VDS=-5V, ID=-2.8A
VGS=0V, IS=0.7A
Input Capacitance
Output Capacitance
Ciss
Coss VDS=-10V,VGS=0V, f=1MHz
Reverse Transfer Capacitance
Crss
Switching Characteristics(Note 2)
Turn-On Delay Time
td(on)
Turn-On Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=-10V,VGEN=-4.5V,
ID=-1A,RGEN=1Ω,RL=10Ω
Turn-Off Fall Time
Total Gate Charge(-4.5V)
Total Gate Charge(-2.5V)
Gate-Source Chage
tf
Qg
Qgs
VDS=-10V,VGS=-2.5V,ID=-3A
Gage-Drain Charge
Qgd
Note:
1. Pulse Test: Pulse Width≤300μs,Duty Cycle≤0.5%.
2. Guaranteed by Design, Not Subject to Production Testing.
Min Typ Max Unit
-20
V
-0.4
-0.7
-1.0
V
±100
nA
-1
µA
58
90
80
125 mΩ
120
200
4
S
-1.2
V
405
75
pF
55
20
60
ns
50
20
5.5
10
3.3
6
0.7
nC
1.3
Rev.3-3-09182019
2/4
MCCSEMI.COM







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