N-Channel Mosfet. SI3134KE Datasheet

SI3134KE Mosfet. Datasheet pdf. Equivalent

Part SI3134KE
Description N-Channel Mosfet
Feature MCC R Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth CA 91.
Manufacture MCC
Datasheet
Download SI3134KE Datasheet



SI3134KE
MCC
R
Micro Commercial Components
Micro Commercial Components
20736 Marilla Street Chatsworth
CA 91311
Phone:(818) 701-4933
Fax: (818) 701-4939
SI3134KE
Features
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Halogen free available upon request by adding suffix "-HF"
Low On-Resistance
High-Side Switching
Low Threshold
Fast Switching Speed
Absolute maximum ratings @ 25ć
Symbol Parameter
VDS
Drain-source Voltage
VGS
Gate-source Voltage
ID
Continuous Drain Current
IDM
Pulsed Drain Current (1)
PD
Total Power Dissipation( 2)
TJ
Operating Junction Temperature
TSTG
Storage Temperature
RthJA Thermal Resistance fromJunction to Ambient
Value
20
±12
0.75
3
150
-55 to +150
-55 to +150
833
Unit
V
V
A
A
mW
к
к
к/W
N-Channel MOSFET
SOT-523
A
D
3
1
2
E
BC
1.GATE
2.SOURCE
3.DRAIN
G
K
H
J
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
A
.059
.067
1.50
1.70
B
.030
.033
0.75
0.85
C
.057
.069
1.45
1.75
D
.020 Nominal
0.50Nominal
E
.035
.043
0.90
1.10
G
.000
.004
.000
.100
H
.028
.031
.70
0.80
J
.004
.008
.100
.200
K
.010
.014
.25
.35
NOTE
ns
Revision: A
www.mccsemi.com
1 of 4
2017/09/02



SI3134KE
ELECTRICAL CHARACTERISTICS(Ta=25unless otherwise noted)
Parameter
Symbol
Test Condition
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =20V,VGS = 0V
Gate-body leakage current
Gate threshold voltage(3)
IGSS
VGS(th)
VGS =±10V, VDS = 0V
VDS =VGS, ID =250µA
Drain-source on-resistance(3)
RDS(on)
VGS =4.5V, ID =650mA
VGS =2.5V, ID =550mA
VGS =1.8V, ID =450mA
Forward tranconductance
Dynamic characteristics(4)
gFS
VDS =10V, ID =800mA
Input Capacitance
Ciss
Output Capacitance
Coss
VDS =16V,VGS =0V,f =1MHz
Reverse Transfer Capacitance
Crss
Switching Characteristics(4)
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
VDD=10V,ID=500mA,
VGS=4.5V,RG=10Ω
Turn-off fall time
tf
Source-Drain Diode characteristics
Diode Forward voltage(3)
VDS
IS=0.15A, VGS = 0V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. This test is performed with no heat sink at Ta=25.
3. Pulse Test : Pulse Width≤300μs, Duty Cycle≤0.5%.
4. These parameters have no way to verify.
MCC
R
Micro Commercial Components
Min Type Max
Unit
20
V
1
µA
±20
µA
0.35 0.75 1.1
V
190 380
260 450
mΩ
390 800
1
S
120
20
pF
15
6.7
4.8
ns
17.3
7.4
1.2
V
Revision: A
www.mccsemi.com
2 of 4
2017/09/02





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)