P-Channel MOSFET. MCT06P10 Datasheet

MCT06P10 MOSFET. Datasheet pdf. Equivalent

Part MCT06P10
Description P-Channel MOSFET
Feature MCC R Micro Commercial Components   omponents 20736 Marilla Street Chatsworth .
Manufacture MCC
Datasheet
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MCT06P10
MCC
R
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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Features
High density cell design for ultra low RDS(ON)
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Halogen free available upon request by adding suffix "-HF"
Maximum Ratings @ 25oC Unless Otherwise Specified
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(note1)
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
Pd
TJ
TSTG
Value
-100
±20
-6
-30
1.25
150
-55 ~+150
Unit
V
V
A
A
W
EQUIVALENT CIRCUIT
MCT06P10
P-Channel
Power MOSFET
SOT-223
4
1
2
3
1. GATE
2&4. DRAIN
3. SOURCE
INCHES
DIM
MIN
A
.248
MAX
.264
B
.130
.146
C
.264
.287
D
.001
.004
E
.114
.122
F
.091
G
---
.071
H
.009
.014
J
.030
---
MM
MIN
MAX
6.30
6.70
3.30
3.70
6.70
7.30
0.02
0.10
2.90
3.10
2.30
---
1.80
0.23
0.35
0.75
---
NOTE
Revision: A
www.mccsemi .com
1 of 4
2017/05/25



MCT06P10
MCC
R
Micro Commercial Components
MOSFET ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
Gate Threshold Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
Diode Forward Current
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Symbol
Condition
Min Typ Max Unit
BVDSS
IDSS
IGSS
VGS=0V ID=-250μA
-100
-
-
V
VDS=-100V,VGS=0V
-
-
1
μA
VGS=±16V,VDS=0V
-
-
±10
μA
VGS(th)
RDS(ON)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
VGS=-10V, ID=-6A
VGS=-4.5V, ID=-6A
VDS=-15V,ID=-5A
-1.2 -1.75 -2.8
V
-
205
m
-
250
m
10
-
-
S
Clss
Coss
VDS=-25V,VGS=0V,
F=1.0MHz
-
760
-
PF
-
260
-
PF
Crss
-
170
-
PF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
-
14
-
nS
VDD=-50V,ID=-6A
-
18
-
nS
VGS=-10V,RGEN=9.1
-
50
-
nS
-
18
-
nS
VDS=-50V,ID=-6A,
VGS=-10V
-
25
-
nC
-
5
-
nC
-
7
-
nC
VSD
VGS=0V,IS=-6A
-
-
-1.2
V
IS
-
-
-
-13
A
trr
TJ = 25°C, IF =-6A
-
35
-
nS
Qrr
di/dt = 100A/μs(Note3)
-
46
-
nC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Revision: A
www.mccsemi .com
2 of 4
2017/05/25







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