P-Channel MOSFET. MCG16P03 Datasheet

MCG16P03 MOSFET. Datasheet pdf. Equivalent

Part MCG16P03
Description P-Channel MOSFET
Feature MCC R Micro Commercial Components Micro Commercial Components 130 W Cochran St, Unit B Simi Valley,.
Manufacture MCC
Datasheet
Download MCG16P03 Datasheet




MCG16P03
MCC
R
Micro Commercial Components
Micro Commercial Components
130 W Cochran St, Unit B
Simi Valley, CA 93065
Tel:818-701-4933
MCG16P03
Features
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Halogen free available upon request by adding suffix "-HF"
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDS
ID
IDM
Parameter
Drain-source Voltage
Drain Current-Continuous
Pulsed Drain Current (Note 1)
TC = 25°C
TC = 100°C
Rating
-30
-16
-12
- 80
VGS
Gate-source Voltage
±20
PD
Maximum Power Dissipation
35
RthJC Thermal Resistance,Junction-to-Case(Note 2)
3.57
E AS
Single pulse avalanche energy (Note 5)
90
TJ
Operating Junction Temperature
TSTG
Storage Temperature
-55 to +150
-55 to +150
Unit
V
A
A
V
W
oC/W
mj
к
к
EQUIVALENT CIRCUIT
P-Channel
Power MOSFET
DFN3030
K
H
M
FD
L
G
J
E
A
C
B
Bottom View
D
DD D
S S Pin1
S
G
DIM
A
B
C
D
E
F
G
H
J
K
L
M
Dimensions
INCHES
MM
MIN
0.028
MAX
0.035
0.000
0.002
0.004
0.010
0.118 BSC
0.126 BSC
0.093 BSC
0.118 BSC
0.026 BSC
0.069 BSC
0.023BSC
0.012
0.020
0.009
0.014
MIN
MAX
0.70
0.90
0.00
0.05
0.10
0.25
3.00 BSC
3.20 BSC
2.35 BSC
3.00 BSC
0.65 BSC
1.75 BSC
0.575 BSC
0.30
0.50
0.24
0.35
NOTE
Revision: A
www.mccsemi.com
1 of 5
2018/10/19



MCG16P03
MCC
R
Micro Commercial Components
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Symbol
BVDSS
IDSS
IGSS
Condition
VGS=0V ID=-250µA
VDS=-30V,VGS=0V
VGS=±20V,VDS=0V
Mi
Typ Max
n
-30 -33
-
-
-
-1
-
- ±100
Unit
V
µA
nA
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250µA
VGS=-10V, ID=-15A
VGS=-4.5V, ID=-15A
VDS=-5V,ID=-15A
-1 -1.5 -1.9
V
- 10.6 15
m
- 16.3 25
m
15
-
-
S
Clss
- 2130 -
PF
VDS=-25V,VGS=0V,
Coss
- 302
-
PF
F=1.0MHz
Crss
- 227
-
PF
td(on)
-
12
-
nS
tr
VDD=-15V, ID=-15A,
-
10
-
nS
td(off)
VGS=-10V,RGEN=1
-
25
-
nS
tf
-
13
-
nS
Qg
- 45.6
-
nC
Qgs
VDS=-15V,ID=-20A,VGS=-10V -
4.6
-
nC
Qgd
- 11.1
-
nC
VSD
VGS=0V,IS=-30A
-
-
-1.2
V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=-15V,VG=-4.5V,L=0.5mH,Rg=25
Revision: A
www.mccsemi.com
2 of 5
2018/10/19







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