P-Channel MOSFET. SI3415A Datasheet

SI3415A MOSFET. Datasheet pdf. Equivalent

Part SI3415A
Description P-Channel MOSFET
Feature MCC R Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth CA 91.
Manufacture MCC
Datasheet
Download SI3415A Datasheet




SI3415A
MCC
R
Micro Commercial Components
Micro Commercial Components
20736 Marilla Street Chatsworth
CA 91311
Phone:(818) 701-4933
Fax: (818) 701-4939
SI3415A
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
High Power and current handing capability
Lead free product is acquired
Halogen free available upon request by adding suffix "-HF"
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDS
ID
Parameter
Drain-source Voltage
Drain Current-Continuous
Rating
-20
-4.0
IDM
VGS
PD
R©JA
TJ
TSTG
Drain Current-Pulsed(Note1)
-30
Gate-source Voltage
±10
Maximum Power Dissipation
1.40
Thermal Resistance Junction to Ambient(Note2)
89.3
Operating Junction Temperature
-55 to +150
Storage Temperature
-55 to +150
Unit
V
A
A
V
W
к/W
к
к
Internal Block Diagram
D
G
S MarkingR15 / 3415
P-Channel
Enhancement Mode
Field Effect Transistor
SOT-23
A
D
3
1.GATE
2. SOURCE
CB
3. DRAIN
12
F
E
G
H
J
K
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.110
.120
B
.083
.098
C
.047
.055
D
.035
.041
E
.070
.081
F
.018
.024
G
.0005
.0039
H
.035
.044
J
.003
.007
K
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
.031
.800
NOTE
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: B
www.mccsemi.com
1 of 4
2016/09/01



SI3415A
MCC
R
Micro Commercial Components
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS
VDS=-20V,VGS=0V
Gate-Body Leakage Current
IGSS
VGS=±10V,VDS=0V
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-4A
Forward Transconductance
gFS
VDS=-5V,ID=-4A
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=-10V,VGS=0V,
F=1.0MHz
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=-10V,RL=2. 5
VGS=-4.5V,RGEN=3
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS=-10V,ID=-4A,
Qgs
VGS=-4.5V
Qgd
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-4A
Diode Forward Current (Note 2)
IS
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Min Typ Max Unit
-20
-
-
-
-
-
V
1
μA
±10
μA
-0.35 -0.55 -0.9
V
-
34
45
m
-
44
60
m
8
-
-
S
- 950
-
PF
- 165
-
PF
- 120
-
PF
-
12
nS
-
10
nS
-
19
nS
-
25
nS
-
12
nC
-
1.4
-
nC
-
3.6
-
nC
-
-
-1.2
V
-
-
-4
A
Revision: B
www.mccsemi.com
2 of 4
2016/09/01







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