P-Channel FET. SIL2623 Datasheet

SIL2623 FET. Datasheet pdf. Equivalent

Part SIL2623
Description Dual P-Channel FET
Feature MCC R Micro Commercial Components   omponents 20736 Marilla Street Chatsworth .
Manufacture MCC
Datasheet
Download SIL2623 Datasheet




SIL2623
MCC
R
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Marking Code: 2623
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDS
ID
IDM
VGS
PD
R©JA
TJ
TSTG
Parameter
Drain-source Voltage
Drain Current-Continuous
Pulsed Drain Currents
Gate-source Voltage
Power Dissipation
Thermal Resistance Junction to Ambient
Operating Junction Temperature
Storage Temperature
Rating
-30
-3.0
-20
_+ 20
0.35
357
-55 to +150
-55 to +150
Equivalent Circuit
Unit
V
A
A
V
W
к/W
к
к
SIL2623
Dual P-Channel
Enhancement Mode
Field Effect Transistor
SOT23-6L
G
6
5
4
1
23
B
C
A
H
K
M
J
D
L
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.012
.020
0.30
0.50
B
.051
.070
1.30
1.80
C
.087
.126
2.20
3.20
D
.037
0.95BSC
G
.074
1.90BSC
H
.106
.122
2.70
3.10
J
.002
.006
0.05
0.15
K
.035
.051
0.90
1.30
L
.012
.024
0.30
0.60
M
.003
.008
0.08
0.22
Revision: A
w w w.mccsemi.com
1 of 4
2016 /09/02



SIL2623
MCC
R
Micro Commercial Components
MOSFET ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Static characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-resistance (note 1)
Forward tranconductance (note 1)
Gate threshold voltage
Diode forward voltage (note 1)
Dynamic characteristics (note 2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching Characteristics (note 2)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
Test Condition
BVDSS
IDSS
IGSS
RDS(on)
gFS
VGS(th)
VSD
VGS = 0V, ID =-250µA
VDS =-30V,VGS = 0V
VGS =±20V, VDS = 0V
VGS =-10V, ID =-3.0A
VGS =-4.5V, ID =-2.0A
VDS =-5V, ID =-2A
VDS =VGS, ID =-250µA
IS=-1A,VGS=0V
Ciss
Coss
Crss
VDS =-25V,VGS =0V,f =1MHz
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VGS=-10V,VDD=-15V,ID=-1A,
RD=15,RG=3.3
VDS=-24V,VGS=-4.5V,ID=-2A
Min Typ
-30
2.0
-1
42
32
5
6
15
3
0.5
1.4
Notes:
1. Pulse test: Pulse width 300µs, duty cycle 2%.
2. These parameters have no way to verify.
Max Units
V
-1
µA
±100 nA
130 m
180 m
S
-3
V
-1.2 V
240
pF
pF
pF
ns
ns
ns
ns
4.5 nC
nC
nC
Revision: A
www.mccsemi.com
2 of 4
2016 /09/02







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