N-channel MOSFET. SI3420A Datasheet

SI3420A MOSFET. Datasheet pdf. Equivalent

Part SI3420A
Description N-channel MOSFET
Feature SI3420A Features • High Power and Current Handing Capability • Epoxy Meets UL 94 V-0 Flammability R.
Manufacture MCC
Datasheet
Download SI3420A Datasheet



SI3420A
SI3420A
Features
High Power and Current Handing Capability
• Epoxy Meets UL 94 V-0 Flammability Rating
• Moisture Sensitivity Level 1
• Halogen Free Available Upon Request By Adding Suffix "-HF"
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
• Operating Junction Temperature Range : -55°C to +150°C
• Storage Temperature Range: -55°C to +150°C
• Thermal Resistance: 100°C/W Junction to Ambient(Note1)
Parameter
Symbol Rating Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Volltage
VGS
±10
V
Continuous Drain Current
Pulsed Drain Current(Note2)
ID
6
A
IDM
30
A
Total Power Dissipation
PD
Note 1. Surface Mounted on FR4 Board , t10s.
1.25
W
2. Repetitive Rating: Pulse Width Limited by Max. Junction
Temperature.
Internal Structure
D
1. *$7E
2. 6285&(
3. '5$,1
G
S
N-CHANNEL
MOSFET
SOT-23
A
D
3
12
F
E
CB
G
H
J
L
K
DIMENSIONS
DIM
INCHES
MIN MAX
MM
MIN MAX
A 0.110 0.120 2.80 3.04
B 0.083 0.104 2.10 2.64
C 0.047 0.055 1.20 1.40
D 0.034 0.041 0.85 1.05
E 0.067 0.083 1.70 2.10
F 0.018 0.024 0.45 0.60
G 0.0004 0.006 0.01 0.15
H 0.035 0.043 0.90 1.10
J 0.003 0.007 0.08 0.18
K 0.012 0.020 0.30 0.51
L 0.007 0.020 0.20 0.50
NOTE
Suggested Solder Pad Layout
0.031
0.800
0.035
0.900
0.079
2.000
inches
mm
0.037
0.950
0.037
0.950
Rev.3-1-03192019
1/4
MCCSEMI.COM



SI3420A
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
Parameter
Symbol
Test Conditions
Static Characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA
Gate-Source Leakage Current
IGSS VDS=0V, VGS =±10V
Zero Gate Voltage Drain Current
IDSS VDS=20V, VGS=0V
Gate-Threshold Voltage(Note 3)
Drain-Source On-Resistance(Note 3)
VGS(th)
RDS(on)
VDS=VGS, ID=250µA
VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
Forward Transconductance(Note 3)
gFS
VDS=5V, ID=6A
Dynamic Characteristics(Note 4)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Switching Characteristics(Note 4)
VDS=10V,VGS=0V,f=1MHz
Total Gate Charge
Gate-Source Charge
Qg
Qgs VDS=10V,VGS=10V,ID=6A
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qgd
td(on)
tr
td(off)
tf
VGS=10V,VDD=10V,RL=1.7Ω,
RGEN=3Ω
Drain-Source Diode Characteristics
Diode Forward Voltage(Note 3)
VSD VGS=0V, IS=1A
Diode Forward Current(Note 2)
IS
Note: 3. Pulse Test : Pulse Width300μs, Duty Cycle2%.
4. Guaranteed by Design, Not Subject to Producting.
SI3420A
Min Typ Max Unit
20
22
V
±100
nA
1
µA
0.5
0.7
1.0
V
20
28
27
35
25
S
515
90
pF
72
12
1
nC
2
3
7.5
ns
20
6
1.2
V
6
A
Rev.3-1-03192019
2/4
MCCSEMI.COM







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