N-Channel MOSFET. SIX3134K Datasheet

SIX3134K MOSFET. Datasheet pdf. Equivalent

Part SIX3134K
Description Dual N-Channel MOSFET
Feature MCC R Micro Commercial Components   omponents 20736 Marilla Street Chatsworth .
Manufacture MCC
Datasheet
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SIX3134K
MCC
R
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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Features
Halogen free available upon request by adding suffix "-HF"
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
N-Channel switch with Low RDS(ON)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Marking:
Equivalent Circuit
D1
G2
S2
6
5
4
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
Rating
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Continuous Drain Current
PD
Power Dissipation (note1)
RthJA
Thermal Resistance from Junction
to Ambient
TJ
Junction Temperature
TSTG Storage Temperature
1
2
S1
G1
Rating
20
±12
0.75
0.15
833
150
-55~150
3
D2
Unit
V
V
A
W
oC/W
oC
oC
SIX3134K
Dual
N-Channel
MOSFET
SOT-563
A
BC
D
G
K
M
H
L
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.006
.011
0.15
0.30
B
.043
.049
1.10
1.25
C
.061
.067
1.55
1.70
D
.020
0.50
G
.035
.043
0.90
1.10
H
.059
.067
1.50
1.70
K
.022
.023
0.56
0.60
L
.004
.011
0.10
0.30
M
.004
.007
0.10
0.18
Revision: A
www.mccsemi.com
1 of 4
2016/05/08



SIX3134K
SIX3134K
MCC
R
Micro Commercial Components
ELECTRICAL CHARACTERISTICS(Ta=25unless otherwise noted)
Parameter
Symbol
Test Condition
STATIC PARAMETERS
Drain-source breakdown voltage
V (BR) DSS VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =20V,VGS = 0V
Gate-body leakage current
Gate threshold voltage (note 2)
Drain-source on-resistance (note 2)
IGSS
VGS(th)
RDS(on)
VGS =±10V, VDS = 0V
VDS =VGS, ID =250µA
VGS =4.5V, ID =0.65A
VGS =2.5V, ID =0.55A
VGS =1.8V, ID =0.45A
Forward tranconductance (note 2)
Diode forward voltage(note 2)
DYNAMIC PARAMETERS (note 3)
gFS
VDS =10V, ID =0.8A
VSD
IS=0.15A, VGS = 0V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS(note 3)
Ciss
Coss
Crss
VDS =16V,VGS =0V,f =1MHz
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
VGS=4.5V,VDS=10V,
ID=0.5A,RGEN=10
Turn-off fall time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tf
Qg
Qgs
VDS =10V,VGS =4.5V,ID =7A
Qgd
Notes :
1. Repetitive rating : Pulse width limited by junction temperature.
2. Pulse Test : Pulse width300µs, duty cycle0.5%.
3. Guaranteed by design, not subject to production testing.
Min Typ
20
0.35 0.54
270
320
390
1.6
79
13
9
6.7
4.8
17.3
7.4
20
1
4
Max Unit
V
1
µA
±20 µA
1.1
V
380 m
450 m
800 m
S
1.2
V
120
pF
20
pF
15
pF
ns
ns
ns
ns
nC
nC
nC
Revision: A
www.mccsemi .com
2 of 4
2016/05/08





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