P-Channel MOSFET. SI2321 Datasheet

SI2321 MOSFET. Datasheet pdf. Equivalent

Part SI2321
Description P-Channel MOSFET
Feature MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth .
Manufacture MCC
Datasheet
Download SI2321 Datasheet




SI2321
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
SI2321
Features
Halogen free available upon request by adding suffix "-HF"
-20V,-2.9A, RDS(ON)=57mΩ@VGS=-4.5V
RDS(ON)=76mΩ@VGS=-2.5V
High dense cell design for extremely low RDS(ON)
Rugged and reliable
High Speed Switching
SOT-23 Package
Marking Code: S21 K
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDS
ID
IDM
IS
VGS
PD
RθJA
TJ
TSTG
Parameter
Drain-source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Continuous Source-Drain Diode Current
Gate-source Voltage
Total Power Dissipation
Thermal Resistance Junction to Ambient
Operating Junction Temperature
Storage Temperature
Rating
-20
-2.9
-12
-0.59
±12
0.35
357
-55 to +150
-55 to +150
Unit
V
A
A
A
V
W
/W
Internal Block Diagram
D
G
S
P-Channel
Enhancement Mode
Field Effect Transistor
SOT-23
A
D
3
1.GATE
2. SOURCE
CB
3. DRAIN
12
F
E
G
H
J
K
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.110
.120
B
.083
.104
C
.047
.055
D
.035
.041
E
.070
.081
F
.018
.024
G
.0005
.0039
H
.035
.044
J
.003
.007
K
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
.031
.800
NOTE
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: C
www.mccsemi.com
1 of 4
2015/05/28



SI2321
MCC
TM
Micro Commercial Components
Electrical characteristics (Ta=25Я unless otherwise noted)
Parameter
Static
Drain-source breakdown voltage
Gate-source leakage
Zero Gate voltage drain current
Gate-source threshold voltage
Symbol
V(BR) DSS
IGSS
IDSS
VGS(th)
Drain-source on-state resistance
RDS(on)
Forward tranconductance
gfS
Forward diode voltage
VSD
Dynamic
Input capacitancea,b
Ciss
Output capacitancea,b
Coss
Reverse transfer capacitancea,b
Crss
Total Gate chargea
Qg
Gate-Source chargea
Qgs
Gate-Drain chargea
Qgd
Switchinga,b
Turn-on delay Time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Notes :
a. Pulse Test : pulse width ”300µs, duty cycle ”2%.
Test Condition
VGS = 0V, ID =-10µA
VDS =0V, VGS =±12V
VDS =-16V, VGS =0V
VDS =VGS, ID =-250µA
VGS =-4.5V, ID =-3.3A
VGS =-2.5V, ID =-2.8A
VGS =-1.8V, ID =-2.3A
VDS =-5V, ID =-3.3A
VGS =0V,IS=-1.6A
VDS =-6V,VGS =0V,f =1MHz
VDS =-6V,VGS =-4.5V,ID=-3.3A
VGEN=-4.5V,VDD=-6V,
ID =-1.0A,RG=6ȍ, RL=6ȍ
SI2321
Min Typ Max Unit
-20
V
±100 nA
-1.0
µA
-0.4
-0.9
V
0.057
0.076 Ÿ
0.110
3
S
-1.2
V
715
170
pF
120
13
nc
1.2
nc
2.2
nc
25
55
ns
90
60
Revision: C
www.mccsemi.com
2 of 4
2015/05/28







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)