P-Channel MOSFET. SI2305B Datasheet

SI2305B MOSFET. Datasheet pdf. Equivalent

Part SI2305B
Description P-Channel MOSFET
Feature MCC R Micro Commercial Components   omponents 20736 Marilla Street Chatsworth .
Manufacture MCC
Datasheet
Download SI2305B Datasheet




SI2305B
MCC
R
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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SI2305B
Features
Halogen free available upon request by adding suffix "-HF"
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
TrenchFET MOSFET
Low RDSON
P-Channel
Enhancement Mode
Field Effect Transistor
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDS
ID
Parameter
Drain-source Voltage
Continuous Drain Current
Rating
-20
-4.2
VGS
Gate-source Voltage
±8
PD
RθJA
TJ
TSTG
Total Power Dissipation
Thermal Resistance Junction to Ambientb
Operating Junction Temperature
Storage Temperature
1.4
90
-55 to +150
-55 to +150
Internal Block Diagram
D
G
S
Unit
V
A
V
W
/W
SOT-23
A
D
3
1.GATE
2. SOURCE
CB
3. DRAIN
12
F
E
G
H
J
K
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.110
.120
B
.083
.104
C
.047
.055
D
.035
.041
E
.070
.081
F
.018
.024
G
.0005
.0039
H
.035
.044
J
.003
.007
K
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: A
www.mccsemi.com
1 of 4
2015/01/01



SI2305B
SI2305B
MCC
R
Micro Commercial Components
Electrical characteristics (Ta=25oC unless otherwise noted)
Parameter
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistancea
Forward transconductancea
Dynamic
Input capacitanceb,c
Output capacitanceb,c
Reverse transfer capacitanceb,c
Total gate chargeb
Symbol
Test Condition
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0V, ID =-250µA
VDS =VGS, ID =-250µA
VDS =0V, VGS =±8V
VDS =-20V, VGS =0V
VGS =-4.5V, ID =-2.7A
VGS =-2.5V, ID =-2.7A
VGS =-1.8V,ID=-2.7A
VDS =-5V, ID =-4.1A
Ciss
Coss
VDS =-4V,VGS =0V,f =1MHz
Crss
VDS =-4V,VGS =-4.5V,
Qg
ID =-4.1A
Gate-source chargeb
Gate-drain chargeb
Gate resistanceb,c
Turn-on delay timeb,c
Rise timeb,c
Turn-off Delay timeb,c
Fall timeb,c
Turn-on delay timeb,c
Rise timeb,c
Turn-off delay timeb,c
Fall timeb,c
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS =-4V,VGS =-2.5V,
ID =-4.1A
f =1MHz
VDD=-4V,
RL=1.2 ,ID=-3.3A,
VGEN=-4.5V,Rg=1
VDD=-4V,
RL=1.2,ID =-3.3A,
VGEN=-8V,Rg=1
Drain-source body diode characteristics
Continuous source-drain diode current
IS
Pulse diode forward currenta
ISM
TC=25oC
Body ciode voltage
VSD
IF=-3.3A
Note :
a. Pulse Test ; Pulse Width<_ 300µs, Duty Cycle <_ 2%.
b. Guaranteed by design, not subject to production testing.
c. These parameters have no way to verify.
Min Typ Max Units
-20
V
-0.5
-0.9
±100 nA
-1
µA
0.035 0.060
0.046 0.080
0.090
6
S
740
290
pF
190
7.8
15
4.5
9
nC
1.2
1.6
1.4
7
14
13
20
35
53
32
48
10
20
ns
5
10
11
17
22
33
16
24
-4.2
A
-10
-0.8 -1.2
V
Revision: A
www.mccsemi.com
2 of 4
2015/01/01







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