N-Channel MOSFET. SI8810 Datasheet

SI8810 MOSFET. Datasheet pdf. Equivalent

Part SI8810
Description N-Channel MOSFET
Feature MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth .
Manufacture MCC
Datasheet
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SI8810
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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SI8810
Features
Halogen free available upon request by adding suffix "-HF"
20V,7.0A, RDS(ON)=22m¡@VGS=4.5V
RDS(ON)=26m¡@VGS=2.5V
Low RDS(ON)
Rugged and reliable
ESD Protected Gate
SOT-23 Package
Marking Code: 8810
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDS
ID
IDM
VGS
R©JA
TJ
TSTG
Parameter
Drain-source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Gate-source Voltage
Thermal Resistance Junction to Ambientb
Operating Junction Temperature
Storage Temperature
Rating
20
7
30
f12
417
-55 to +150
-55 to +150
Internal Block Diagram
Unit
V
A
A
V
к/W
к
к
N-Channel
Enhancement Mode
Field Effect Transistor
SOT-23
A
D
3
1.GATE
2. SOURCE
CB
3. DRAIN
12
F
E
G
H
J
K
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.110
.120
B
.083
.104
C
.047
.055
D
.035
.041
E
.070
.081
F
.018
.024
G
.0005
.0039
H
.035
.044
J
.003
.007
K
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: A
www.mccsemi.com
1 of 4
2014/12/05



SI8810
SI8810
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol Test Condition
STATIC PARAMETERS
Drain-source breakdown voltage
V (BR) DSS VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =16V,VGS = 0V
Gate-body leakage current
VGS =±4.5V, VDS = 0V
IGSS
VGS =±8V, VDS = 0V
Gate threshold voltage (note 1)
VGS(th)
VDS =VGS, ID =250µA
VGS =10V, ID =7A
VGS =4.5V, ID =6.6A
Drain-source on-resistance (note 1)
RDS(on) VGS =3.8V, ID =6A
VGS =2.5V, ID =5.5A
VGS =1.8V, ID =5A
Forward tranconductance (note 1)
gFS
VDS =5V, ID =7A
Diode forward voltage(note 1)
VSD
IS=1A, VGS = 0V
DYNAMIC PARAMETERS (note 2)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate charge
Gate-source charge
Gate-drain charge
SWITCHING PARAMETERS(note 2)
Turn-on delay time
Ciss
Coss
Crss
Qg
Qgs
Qgd
VDS =10V,VGS =0V,f =1MHz
VDS =10V,VGS =4.5V,ID =7A
td(on)
Turn-on rise time
Turn-off delay time
Turn-off fall time
tr
td(off)
tf
VGS=5V,VDD=10V,
RL=1.35,RGEN=3
Notes :
1. Pulse Test : Pulse width300µs, duty cycle0.5%.
2. Guaranteed by design, not subject to production testing.
MCC
TM
Micro Commercial Components
Min Typ Max Unit
20
V
1
µA
±1
µA
±10 µA
0.4
1
V
20
m
22
m
24
m
26
m
35
m
9
S
1
V
1150
pF
185
pF
145
pF
15
nC
0.8
nC
3.2
nC
6
ns
13
ns
52
ns
16
ns
Revision: A
www.mccsemi.com
2 of 4
2014/12/05







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